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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1265-1271 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the structure and transport properties of GdBa2Cu3O7 films on SrTiO3(001) and NdGaO3(001). We found that the films can be grown pseudomorphically up to at least 42 nm thickness on SrTiO3 whereas the critical thickness is less than 14 nm for films on NdGaO3. The carrier density of pseudomorphic films on SrTiO3 is tuned by the pseudomorphic stress field and films on SrTiO3 show higher T* and lower Tc compared to films of the same thickness on NdGaO3. For a 28 nm thick GdBa2Cu3O7 film on SrTiO3, the hole density per CuO2 plane is reduced to 0.12, compared to 0.16 for the optimally doped and stress-free RBa2Cu3O7. The measured temperature dependence of Jc can be understood and described by interface stress pinning. © 2002 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 512-516 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe an electrochemical cell allowing x-ray diffraction from the working electrode in situ. The key feature of our novel design is a hemispherical fused silica dome serving as the x-ray window. The electrode is covered with a thick layer of electrolyte during the x-ray measurement, avoiding mass transport limitations inherent to common setups, where the thickness of the electrolyte layer is strongly reduced for the diffraction experiment. This allows in particular the monitoring of electrode processes which are associated with the consumption of species from solution and/or generation of a significant amount of reaction products. All solid angles in the hemisphere above the sample surface are accessible for the incoming and outgoing x-ray beam at a constant path length in the electrolyte. Thus, our cell is perfectly suitable for in situ surface x-ray diffraction, truncation rod scattering, and specular reflectivity measurements. We demonstrate the performance of the new cell by monitoring the electrochemical stripping of a 50 nm thick amorphous As layer on GaAs(001) in 0.5 M H2SO4 in situ with x rays. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2990-2992 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface grown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4, we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our results suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous electrolyte. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1703-1705 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al2O3(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga Kα fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1176-1178 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the x-ray standing-wave technique and bulk x-ray diffraction to investigate the structural properties of thin CoSi2 layers grown epitaxially on Si(111). The perpendicular lattice mismatch with respect to the Si substrate was found to be −0.0152±0.0003 and −0.016±0.001 for 6-nm-thick and 16-nm-thick layers, respectively. The distance between Si(111) and the first Co layer was measured to be (0.288±0.005) nm and is thus stretched by (0.014±0.005) nm compared with a value determined by Si-like bulk bond length. The Co atoms are attached to the Si(111) dangling bonds in agreement with the model of fivefold coordinated metal atoms at the interface.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 252-254 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The position of As atoms on the silicon(100) surface has been determined using the x-ray standing-wave technique and synchrotron radiation. Since the experiments were performed in air, the As-covered (100) surface was capped with amorphous silicon. The results of the measurements are in agreement with the symmetric As dimer model for the (100) surface. The distance of the As dimers normal to the ideal (100) surface was found to be 1.26±0.01 A(ring) which agrees with the value obtained from total energy minimization calculations. With no protective coating the As position was higher.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2427-2429 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of thin YBa2Cu3O7−δ films grown on LaSrAlO4 (001) and SrTiO3 (001) by pulsed laser deposition was studied by scanning tunneling microscopy (STM). STM was carried out in ultra high vacuum without prior exposure of the films to air. In the STM images, stacks of terraces which are separated by steps of various heights were observed. Some steps were shorter than the YBa2Cu3O7−δ unit cell height c≈1.2 nm. We present evidence of the fact that the YBa2Cu3O7−δ thin film surface exhibits different terminations. The microstructure revealed from the STM images implies a non-unit-cell growth mechanism. © 1996 American Institute of Physics.
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  • 8
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: YBa2Cu3O7 (YBCO) thin films with c-axis orientation on (001) SrTiO3, (001) MgO and (110) NdGaO3 substrates were examined by four-circle diffractometry with Co Kα and synchrotron radiation (λ = 0.1540 nm) using the q-scan technique. Small local film rotations about [001] have been introduced by two different mechanisms: (1) the orthorhombic/tetragonal phase transition driven by iron substitution or changes of the oxygen content; (2) heavy-ion irradiation (1.4 GeV 238U UNILAC, GSI Darmstadt). In the original orthorhombic state, the (110) axes of film and substrate are parallel so that the (100)film axes form an angle of 0.45° to those of the substrate. With decreasing orthorhombicity, this angle decreases to zero for tetragonal symmetry. Irradiation of the orthorhombic film by heavy ions produces detwinning and leads to a macroscopic preferential parallel alignment of the 〈100〉 axes of film and substrate. This reorientation is completed for a dose between 1011 and 1012 particles cm−2. High-resolution transmission electron microscopy investigations reveal a rotation of crystallites in the ab plane of irradiated samples of up to 3°. For irradiation with 200 (456) MeV 40Ca, no detwinning is observed.
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  • 9
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 439 (2006), S. 707-710 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Corrosion destroys more than three per cent of the world's GDP. Recently, the electrochemical decomposition of metal alloys has been more productively harnessed to produce porous materials with diverse technological potential. High-resolution insight into structure formation during ...
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 235-240 (1994), S. 677-678 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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