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  • 1
    Electronic Resource
    Electronic Resource
    Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3668-3670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin (∼2 nm thick) amorphous diamond coating was prepared on single crystal silicon tip arrays by using a filtered vacuum arc plasma deposition technique. The coating has a microscopically uniform morphology. As compared to uncoated tips, the electron emission of the coated tip arrays is enhanced, showing an increase in the total current, lower turn-on field and a lower-slope Fowler–Nordheim plot. We propose that field-emitted electrons could tunnel through such a thin coating with few scattering events. It is shown that the low potential barrier at the interface is the major cause of the enhancing effects instead of the negative surface electron affinity of the coating. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122857
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  • 2
    Electronic Resource
    Electronic Resource
    Graphitization of nanodiamond powder annealed in argon ambient (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3651-3653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanodiamond powder was annealed at each of the following temperatures: 300, 600, 800, 1000, and 1150 °C, for an hour in flowing argon ambient. The variations of x-ray diffraction patterns and Raman spectra of the powder with different annealing temperatures were studied. While being annealed at temperatures higher than 800 °C, the powder can undergo a phase-transition process from cubic diamond to graphite. In addition, the size of nanodiamond crystallites decreased from ∼50 to ∼25 Å. The physical mechanism responsible for the variation in Raman spectra is discussed using a phonon-confinement model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123211
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  • 3
    Electronic Resource
    Electronic Resource
    An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2383-2385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis is carried out of the physical origin of thermal instability that can trigger a catastrophic vacuum breakdown event in vacuum microelectronic devices based on flat diamond emitters. The temperature rise in a diamond film will enhance internal field emission across metal–diamond interface. This effect can lead to a regenerative process that can initiate a breakdown event at temperature lower than the melting point of an emitter. A set of equations has been developed. These theoretical findings are successfully applied to explain the instability of field emission from the nondoped diamond films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125121
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  • 4
    Electronic Resource
    Electronic Resource
    Physical origin of nonlinearity in the Fowler–Nordheim plot of field-induced emission from amorphous diamond films: Thermionic emission to field emission (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinearity is observed in Fowler–Nordheim (FN) plots of field emission from nondoped and nitrogen-doped amorphous diamond films. Based on a unified electron emission equation a detailed analysis is carried out. The results from numerical calculation of the unified equation are consistent with the experimental data. It is shown that the nonlinearity in the FN plot originates from a transition from thermionic emission to field emission as the applied field increases. The electrical field ranges are derived in which the field emission and thermionic emission approximation applies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126377
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1323-1325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A field-induced electron emission phenomenon has been observed from nitrogen-doped diamond films deposited on molybdenum substrates by microwave plasma enhanced chemical vapor deposition using N2/CH4 as feedstock. Their field-induced electron emission characteristics, i.e., current–voltage characteristics and distribution of emission sites, were studied using the transparent anode imaging technique. A repeatable abrupt change of "on" and "off" states of emission was observed at two corresponding specific fields during circling of both increasing and decreasing applied gap fields. A plausible explanation is given to this type of field-induced electron emission phenomenon, in which a two-layer structure consisting of amorphous carbon and diamond is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124681
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  • 6
    Electronic Resource
    Electronic Resource
    Microfabrication and characterization of an array of diode electron source using amorphous diamond thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2921-2923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Details are given of an experimental study of microfabrication and characterization of a diode electron source using amorphous diamond (a-D) thin films. 〈100〉 n-type etched Si wafers with microscale-rough surface were used as cathode substrates. Filtered cathodic vacuum arc deposition technique was employed to coat a thin layer of a-D film on the Si substrate. Using the conventional photolithography, an array of well-defined diode structures with 20 μm gate diameter were formed. In addition, x-ray energy dispersive spectroscopy and atomic force microscopy were used to characterize the diode structure. Furthermore, the total emission current versus applied gate voltage of the diode electron source was measured. The physics of the emission process from the a-D diode was discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320458
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  • 7
    Electronic Resource
    Electronic Resource
    Field-induced electron emission from broad-area YBaCuO high-T c electrodes (1993)
    Springer
    Journal of materials science 28 (1993), S. 2833-2839 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A “transparent anode” facility has been used to compare the field-induced electron emission characteristics of planar YBaCuO high-T c electrodes at room temperature and in the superconducting state. It was found that virgin electrodes under ambient conditions exhibit an initial “current switch-on” event at typical field levels of ∼30 MV m−1, with the emission coming from a single point site: a large hysteresis effect was also observed when the field was cycled. In contrast, at low temperatures, no switch-on events were observed, and the hysteresis effect was significantly smaller. Also, if an emission current in the nanoamp range was recorded under constant-field conditions as the temperature was lowered through T c, there was an abrupt (i.e. step-like) fall in both the emission current and its associated noise at the superconducting transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00356227
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  • 8
    Electronic Resource
    Electronic Resource
    Helium ion and fast atom scattering from polycrystalline copper surfaces (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 18-24 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low-energy ion scattering from surfaces is an established technique that gives unique information from the first one or two atomic layers on a surface. The standard technique employing an electostatic analyser, however, has some disadvantages. It detects only scattered ions whose yield from surfaces is relatively low and thus high incident ion fluxes must be used. A high flux of ions will change the nature of the surface in a number of ways. It will lead to significant preferential sputtering and to charging effects, particularly in insulating and semiconducting samples. It has been shown also that ions produce more chemical damage in surfaces that do neutrals of the same energy and species. Many of these disadvantages may be overcome if neutrals are used as the bombarding particles instead of ions.Conventional electrostatic methods cannot be employed to detect neutral sacttered spectra. Hence, a time-of-flight mass spectrometer with a pulsed ion/fast atom source (energy range 100-5000 eV) has been developed. This instrument has been used to measure the energy of particles scattered from a polycrystalline copper surface bombarded with either ions or fast atoms. In this study, spectra of He scattered from both ‘ion-cleaned’ and ‘ion-cleaned and heated’ copper surfaces were monitored for incident angles ranging from 5° to 75° with a constant scattering angle of 90°. For the ‘ion-cleaned’ surfaces, spectra of both ion and neutral projectiles show that the technique is sensitive to the outermost surface atomic layer, but that fast atom bombardment seems the more surface specific. For the ‘ion-cleaned and heated’ surface, spectra for both projectiles are qualitatively identical and first-order effects can be accounted for by the single binary collision model; however, small but significant differences in peak energy were observed and these may be explained in terms of inelastic collision processes.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740160107
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  • 9
    Electronic Resource
    Electronic Resource
    A time-of-flight study of water molecular ion and neutral scattering from copper surfaces (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 154-158 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Collision of water molecule ions with solid surfaces can result in neutralization and fragmentation of the molecule. The energy distribution of total scattered yield was measured with a time-of-flight mass spectrometer. The major spectral peak energy is close to the value expected for a binary collision of OH with a copper atom, and the energy distribution can be accounted for by the existing dissociation models. Comparisons are made between the scattering of water molecule ions and that of He+ and Ne+ ions in terms of the spectral full width at half-maximum, shape and the scattered yield. It is found that significant water vapour neutral peaks appear in the spectra of scattered Ne. This implies that strong non-resonance charge exchange mechanisms occur in the projectile beams. The spectral peak heights of the water ion and neutral scattered at different incident angles are compared to those of Ne.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740160130
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  • 10
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    Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-12-21
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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