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  • 1
    Monograph available for loan
    Monograph available for loan
    Nonlinear regression (1989)
    New York [u.a.] : Wiley
    Details Availability
    Call number: 19/M 92.0620
    Type of Medium: Monograph available for loan
    Pages: XX, 768 S.
    ISBN: 0471617601
    Series Statement: Wiley series in probability and mathematical statistics : Probability and mathematical statistics
    Classification:
    C.1.8.
    Language: English
    Location: Reading room
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Ion channeling in textured polycrystalline diamond films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2134-2136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeling of H+ and H2+ ions of energies between 1.0 and 2.0 MeV in 〈100〉-textured polycrystalline diamond films grown by microwave plasma-assisted chemical-vapor deposition has been observed with Rutherford backscattering. The width of the orientational distribution of the diamond crystallites as deduced from the measured projectile velocity dependence of the observed channeling angular scans amounted to about 1°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354741
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  • 3
    Electronic Resource
    Electronic Resource
    Ion and electron dynamics in the sheath of radio-frequency glow discharges (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2909-2922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution of ion energies and the temporal modulation of ion and electron currents were measured at the cathode of an asymmetric, capacitively coupled rf discharge system operated at 13.56 MHz. The ion energy distributions (IEDs) were found to exhibit pronounced features, namely a characteristic series of peaks and double peaks, their position and intensity depending strongly on process parameters such as self-bias voltage and pressure. Those structured IEDs have been observed for a variety of gases including argon, oxygen, hydrogen, and benzene. The IED features are explained by the rf modulation of the sheath potential in combination with the creation of thermal ions by charge-exchange processes in the sheath. A model for the ion transport through collisional rf sheaths is presented which satisfactorily explains the observed IEDs. It will be shown that the observed features are an inherent property of capacitively coupled rf discharges. By analyzing these structures detailed information about the spatial field distribution in the sheath and the transport of ions through rf plasma sheaths is obtained. The time-resolved measurements revealed that the ion current behind the cathode is strongly modulated. This temporal modulation has been described by the same theory confirming the applicability of the present model. Finally the electron current was found to be confined to short periodic pulses of 2–3 ns width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348601
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  • 4
    Electronic Resource
    Electronic Resource
    Electrically induced thermal transient experiments for thermal diffusivity measurements on chemical vapor deposited diamond films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2105-2109 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To investigate the in plane thermal diffusivity of chemical vapor deposited diamond layers, two new techniques were developed based on electrically induced converging and linear thermal waves. With these methods, free-standing, laser-cut diamond samples, 100 μm or larger in thickness can be analyzed. Laser cutting leaves a graphitic surface layer along the cutting edge. Therefore, a short high voltage pulse, applied at the graphitic rim resistor, is used to generate a thermal transient. The propagation of the wave is measured optically either in the center of the circular disk or at one side of a bar shaped sample. Both techniques require only very little sample preparation. They are shown to be simple, accurate, and independent of sample thickness and induced energy. In order to analyze the experimental data we present both an analytical model and a numerical simulation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148905
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  • 5
    Electronic Resource
    Electronic Resource
    Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1878-1880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1¯10] axis. Homogeneous macro steps with (001) terraces are observed in the [1¯10] direction forming a vicinal angle of 3°–4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121213
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  • 6
    Electronic Resource
    Electronic Resource
    Novel microwave plasma reactor for diamond synthesis (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1149-1151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations were performed to predict the performance of microwave plasma reactors with various reactor geometries. The simulations include the calculation of the electric field distribution using the finite integration theory and the determination of the plasma density distribution based on a breakdown field algorithm. One reactor geometry with a cavity having the shape of a rotational ellipsoid turned out to be very promising. The electric field within this cavity exhibits two pronounced maxima at the two focal points of the ellipsoid. By coupling microwave energy into one maximum via an antenna, large electric field strengths can be generated in the counter maximum. This effect has been used to excite intense discharges that are very stable, spatially extended, homogeneous, and free from wall contact. These discharges were employed for the chemical vapor deposition of large area diamond wafers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120997
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1482-1484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared Raman spectrum of chemical vapor deposited (CVD) diamond films has been correlated with the in-plane thermal conductivity of the films. The scattering strength of the 1332 cm−1 zone-center phonon line of diamond, measured relative to the intensity of the nondiamond carbon phase, was found to increase strongly with increasing thermal conductivity. A good correlation between these two properties was found even for the highest quality CVD diamond films with peak thermal conductivities up to 54 W/cm K. The dependence of the peak thermal conductivity on the intensity of the 1332 cm−1 phonon line normalized to the scattering strength of the nondiamond carbon phase can be described by a power law with an exponent of 0.5. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116261
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen induced vibrational and electronic transitions in chemical vapor deposited diamond, identified by isotopic substitution (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 177-179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films grown by chemical vapor deposition from 12C and 13C containing gases have been studied by Fourier transform infrared spectroscopy. A sharp absorption band observed at 3123 cm−1 is attributed to a CH vibrational absorption. It resembles the previously observed 3107 cm−1 absorption band in natural diamond. Isotopic replacement of carbon, hydrogen, and nitrogen by 13C, 2H, and 15N reveals, that a CH center without nitrogen participation is responsible for this new absorption. Furthermore, new hydrogen related electronic transitions have been observed around 7300 cm−1. These lines shift to higher energies in 13C crystals, in accordance with the increase of the electronic band gap. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113126
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen stabilized 〈100〉 texture in chemical vapor deposited diamond films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of nitrogen impurities in CH4/H2 gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor deposition. The nitrogen concentration in the process gas was varied between 1 and 1000 ppm. Optical emission spectroscopy was applied to detect the nitrogen in the plasma via emission from CN radicals. The morphology and texture of polycrystalline films prepared with various N2 impurity levels and CH4 concentrations in the range 0.5%–2% was investigated using scanning electron microscopy and x-ray texture analysis. For the films prepared with low methane concentrations (e.g., 0.5%) only a minor influence of the nitrogen was observed. However, most interestingly, for higher methane concentrations (1%–2%) the addition of small amounts of nitrogen turned out to have a tremendously beneficial effect on the film morphology and structure. Films prepared without additional nitrogen are of nanocrystalline structure and of minor quality, whereas films prepared with nitrogen concentrations in the range 10–100 ppm exhibit a pronounced 〈100〉 texture and a considerably improved crystalline quality as judged by Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113064
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared Raman study of the phonon linewidth and the nondiamond carbon phase in 〈110〉 and 〈100〉 textured polycrystalline diamond films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1284-1286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study the width of the 1332 cm−1 phonon line and the relative intensity of scattering from nondiamond carbon in 〈110〉 and 〈100〉 textured diamond films prepared by low pressure chemical vapor deposition. Infrared excitation at 1.16 eV has been used to give a high sensitivity to amorphous graphitelike carbon inclusions in diamond films. For 〈110〉 textured films a narrowing of the phonon linewidth is observed with decreasing intensity of scattering from amorphous carbon. Films with vanishing Raman scattering from nondiamond carbon, even under infrared excitation, exhibit the narrowest phonon linewidth of about 4 cm−1. For 〈100〉 textured films also a comparatively narrow phonon linewidth is observed in spite of the strong Raman signal from nondiamond carbon. This can be explained by defective growth sectors terminated by {111} facets which surround the almost perfect 〈100〉 columns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107566
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