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  • 1
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1572-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550 °C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7×1012 cm−2 is obtained for poly-Si films with a doping level less than 2.2×1019 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357735
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  • 2
    Electronic Resource
    Electronic Resource
    Nanometer thick Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3441-3445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex superlattices having layers as thin as 1.5 nm have been grown by an ultrahigh vacuum/chemical vapor deposition system. High-resolution double-crystal x-ray diffraction, and conventional and high-resolution cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical x-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various periodicity. A cross-sectional transmission electron micrograph of an 80 period Si(4.2 nm)/Si0.878Ge0.122 (1.5 nm) superlattice, in which each individual layers was clearly resolved, demonstrated the capability of this growth technique for nanometer thick layer deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356104
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4928-4935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport measurements are very sensitive to the structure of a heterojunction. This sensitivity is used in conjunction with a realistic model for the band diagram to determine the position of the dopant junction relative to the metallurgical junction. This electrical technique involves the determination of an effective barrier height from temperature-dependent I-V measurements and comparison with calculated barrier heights. The sensitivity of the electrical characteristics to the device structure can often be greater than that of secondary ion mass spectroscopy or C-V profiling. GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown under a variety of conditions are used to demonstrate this technique. Growth conditions which produce abrupt zinc profiles are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343209
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4975-4986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed deep level transient spectroscopic study in p-type Mg- and Zn-doped GaAs epitaxial layers grown by metal-organic vapor phase epitaxy. Dependence of deep level structures on doping concentrations and growth temperatures has been investigated. Over a wide range of growth conditions, four hole traps and an electron trap ranging in activation energy from 0.18–0.79 eV were measured in GaAs:Mg while only a single hole trap has been observed in GaAs:Zn.The presence of a certain trap and its concentration in GaAs:Mg depends mainly on the doping concentration in the layers. The total trap concentration in the GaAs:Mg decreases rapidly with doping concentration for p〉4×1017 cm−3. The physical and chemical origins of several of these traps have been identified. The Mg-doped GaAs always exhibited a greater concentration of midgap trap levels than the Zn-doped material, regardless of dopant concentration or growth temperature. The overall defect structure and dopant incorporation characteristics indicate that Zn is the preferred dopant species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342447
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  • 5
    Electronic Resource
    Electronic Resource
    Deposition and device application of in situ boron-doped polycrystalline SiGe films grown at low temperatures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5395-5401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of in situ boron-doped polycrystalline silicon-germanium (poly-Si1−xGex) films at temperatures below 550 °C was investigated using an ultrahigh-vacuum chemical- vapor-deposition system. These films with a fine grain structure were obtained for boron concentrations higher than 1021 cm−3. It is attributed to the enhanced nonequilibrium doping effect due to the addition of GeH4 gas during film deposition. Poly-Si0.56Ge0.44 films with a carrier concentration of 8×1020 cm−3 were achieved at a growth temperature of 500 °C. Such a high activated carrier concentration resulted in a film resistivity less than 2 mΩ cm. Utilizing these characteristics, a novel approach was proposed and demonstrated to fabricate p-channel polycrystalline silicon thin-film transistors at process temperatures below 550 °C. These transistors with a maximum field effect mobility up to 28 cm2/V s and an on/off current ratio over 106 were achieved without employing any post-treatment step, indicating the feasibility of this approach on the fabrication of polycrystalline silicon thin-film transistors at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354244
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  • 6
    Electronic Resource
    Electronic Resource
    High electron mobility in modulation-doped Si/SiGe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2117-2119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrahigh-vacuum chemical vapor deposition has been exploited to grow single-heterojunction n-type modulation-doped Si/SiGe structures. Phosphorus dopant is imbedded in the SiGe layer at two distinct positions: one at the surface to prevent depletion by surface states, and the other separated from the Si heterointerface by an intrinsic SiGe spacer, to supply electrons to the two-dimensional electron gas. With a 4-nm-thick spacer layer, peak mobilities of 1800 cm2/V s, 9000 cm2/V s, and 19 000 cm2/V s were measured at room temperature, 77 and 1.4 K, respectively. These are the highest values reported for this material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104978
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  • 7
    Electronic Resource
    Electronic Resource
    Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels ((approximately-greater-than)1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100008
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Si0.85Ge0.15/Si p-type modulation-doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm−3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze-out behavior has been observed at low temperatures. The existence of two-dimensional hole gas was determined by the tilted-field Shubnikov–de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence-band maximum of Si0.85Ge0.15 alloy has been estimated to be (approximately-equal-to)0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si0.85Ge0.15 alloy, has been obtained for the heterostructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101019
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  • 9
    Electronic Resource
    Electronic Resource
    High hole mobility in Si/Si1−xGex/Si p-type modulation-doped double heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2333-2335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm−2. This is the highest hole mobility ever reported for p-type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two-dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102274
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2713-2715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109241
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