Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2471-2472
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122485
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