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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8161-8168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray standing wave (XSW) technique was applied to determine the lattice location of Si impurity atoms in GaAs(100) crystals. The synchrotron radiation of X24A at the national synchrotron light source was utilized to set up backreflection XSW, an experimental geometry which drastically relaxes the otherwise stringent requirement on the lattice perfection. Specifically, the lattice sites were determined with respect to the [311] reflection planes which differentiate a Ga site from an As site. With the aid of an appropriate choice of the x-ray fluorescence filter, we were able to study GaAs(100) samples with very low levels of Si impurities. On a sample doped with 4×1018 cm−3 Si during the molecular-beam epitaxy growth, we found that the Si atoms predominantly occupied the Ga sites. On both an ion-implanted sample after annealing and a sample with Si impurities introduced by thermal diffusion, about 30% of the Si atoms occupied the Ga sites, and the rest occupied random sites. The As site occupation was less than 6%. Suggestions are made for further experiments with improved sensitivity.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8103-8112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary electron emission spectroscopy (SEES) is used to examine the transport and emission of low-energy electrons in diamond. In particular, SEES measurements from single-crystal (100) and (111) diamond and polycrystalline chemical vapor deposited (CVD) diamond are compared in order to examine the effect of crystallographic orientation on the emission characteristics. Crystal orientation is found to influence the surface properties of the samples but not the low-energy transport properties. Specifically, very high yields are obtained from negative-electron-affinity (NEA) surfaces of all three samples, indicating that low-energy electrons are transported and emitted very efficiently regardless of crystal orientation. However, the energy distributions measured from adsorbate-covered C(111) surfaces are broader and shifted lower in energy than those measured from corresponding C(100) surfaces. In fact, the energy distributions measured from polycrystalline CVD diamond surfaces appear to be a superposition of the energy distributions measured from the (100) and (111) crystal faces. For all three samples, a broader, lower-energy distribution is measured from cesiated NEA surfaces than from hydrogenated NEA surfaces. This indicates that the electron emission process differs at the two types of surfaces. The emission characteristics observed for the different crystal orientations and adsorbate coverages can be understood by considering the role of surface structure in the emission process.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1860-1867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond exhibits very high, but widely varying, secondary-electron yields. In this study, we identified some of the factors that govern the secondary-electron yield from diamond by performing comparative studies on polycrystalline films with different dopants (boron or nitrogen), doping concentrations, and surface terminations. The total electron yield as a function of incident-electron energy and the energy distribution of the emitted secondary electrons showed that both bulk properties and surface chemistry are important in the secondary-electron-emission process. The dopant type and doping concentration affect the transport of secondary electrons through the sample bulk, as well as the electrical conductivity needed to replenish the emitted electrons. Surface adsorbates affect the electron transmission at the surface-vacuum interface because they change the vacuum barrier height. The presence of hydrogen termination at the diamond surface, the extent of the hydrogen coverage, and the coadsorption of hydrocarbon-containing species all correlated with significant yield changes. Extraordinarily high secondary-electron yields (as high as 84) were observed on B-doped diamond samples saturated with surface hydrogen. The secondary electrons were predominantly low-energy quasithermalized electrons residing in the bottom of the diamond conduction band. Two key reasons for the unusually high yields are (1) the wide band gap which allows the low-energy secondary electrons to have long mean-free paths, and (2) the very low or even negative electron affinity at the surface which permits the low-energy quasithermalized electrons that reach the surface to escape into vacuum.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3057-3064 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary electron emission spectroscopy (SEES) is used to investigate the low-energy electron emission characteristics of the C(111) surface. A negative electron affinity (NEA) is observed at hydrogenated and cesiated C(111) surfaces, and very high secondary electron yields are measured from these surfaces. The emission from both surfaces is sharply peaked at low energy, although the cesiated surface produces greater energy spread than the hydrogenated surface. Yield measurements are uniform across the hydrogenated and cesiated surfaces, but energy distribution curves (EDCs) contain emission features that depend on the measurement position on the surface. Specifically, an intense secondary emission peak centered above Ec is observed in EDCs measured at all positions while a weaker peak lying completely below Ec appears only at specific regions of the surface. The intense peak is well understood and has been observed in EDCs taken from NEA surfaces of C(100) and chemical vapor deposited diamond. However, the weaker peak has not been observed in previous SEES studies of diamond. This peak corresponds to electron emission from surface or defect electronic states in the energy gap, and it is manifested in the EDCs only when χ is sufficiently lowered by the adsorption of H or Cs. Although the origin of the surface or defect states is not known, it appears to be associated with structural properties of the C(111) surface.
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Ultramicroscopy 11 (1983), S. 199-206 
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 6
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 75 (1978), S. 239-255 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 69 (1977), S. 403-427 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applications of Surface Science 16 (1983), S. 1-24 
    ISSN: 0378-5963
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applications of Surface Science 16 (1983), S. 73-92 
    ISSN: 0378-5963
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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