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  • 1
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of nitrogen on the band structure of GaInNAs alloys (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2349-2351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371148
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3691-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of optical studies on the properties of GaN grown by low-pressure metalorganic chemical-vapor deposition, with emphasis on the issues vital to device applications such as stimulated emission and laser action as well as carrier relaxation dynamics. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. Using a picosecond streak camera, the free and bound exciton emission decay times were examined. In addition, the effects of temperature and pressure on the optical interband transitions and the transitions associated with impurity/defect states were studied using a variety of spectroscopic methods, including photoluminescence and photoreflectance. The fundamental band gap of GaN was mapped out as a function of temperature using the empirical Varshni relation. The pressure coefficient of the gap was determined using diamond-anvil pressure-cell technique. The hydrostatic deformation potential for the direct Γ band gap was also derived from the experimental results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361200
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  • 4
    Electronic Resource
    Electronic Resource
    Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 475-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103670
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  • 5
    Electronic Resource
    Electronic Resource
    Pressure-dependent photoluminescence study of InxGa1−xN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2433-2435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of pressure-dependent photoluminescence (PL) studies of single-crystal InxGa1−xN (0≤x〈0.15) films grown on top of thick GaN epitaxial layers by metalorganic chemical vapor deposition with sapphire as substrates. PL measurements were performed at 10 K as a function of applied hydrostatic pressure using the diamond-anvil-cell technique. The luminescence emissions from the InxGa1−xN epifilms were found to shift linearly toward higher energy with increasing pressure. By examining the pressure dependence of the PL spectra, the pressure coefficients for the emission structures associated with the direct band gap of InxGa1−xN were determined. The values of the pressure coefficients were found to be 3.9×10−3 eV/kbar for In0.08Ga0.92N and 3.5×10−3 eV/kbar for In0.14Ga0.86N. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120083
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of boron on the deep donors (DX centers) in GaAs:Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We found that, when boron was introduced into GaAs:Si, the deep donors induced by pressure exceeding 20 kbar reported previously by M. Mizuta, M. Tachikawa, H. Kukimoto, and S. Minomura [J. Appl. Phys. 24, L143 (1985)] disappeared while new donor levels with reduced binding energies and capture barrier heights appeared. It is proposed that B atoms paired up with Si donor atoms and the resultant change in the short-range potential of the Si donor atoms depressed the capture barrier height of the pressure-induced deep donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100710
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  • 7
    Electronic Resource
    Electronic Resource
    Intrinsic exciton transitions in GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 455-461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic excitonic transitions in GaN have been studied using a variety of spectroscopic measurements. Sharp spectral structures associated with intrinsic free excitons could be observed in photoluminescence, reflection, and absorption spectra. The energy positions of excitonic transitions in GaN epitaxial layers were found to be influenced by the residual strain resulting from lattice-parameter and thermal-expansion mismatches between the epilayers and the substrates. The values of the four principal deformation potentials of wurtzite GaN were derived by using the strain tensor components determined by x-ray measurements. The observation of spectral features involving the emission of LO phonons in absorption and photoluminescence excitation spectra at energies above exciton resonances indicate that a phonon-assisted indirect excitation process, which simultaneously generates a free exciton and a LO phonon, is a very significant and efficient process in GaN. The lifetime of the free excitons is found to be longer than the relaxation time of LO-phonon emission but much shorter than that of acoustic-phonon emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366660
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  • 8
    Electronic Resource
    Electronic Resource
    Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1195-1197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100017
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3158-3160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366101
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  • 10
    Electronic Resource
    Electronic Resource
    Pressure dependence of Schottky barrier height at the Pt/GaAs interface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of −0.26 meV/kbar2. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100045
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