ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The ceramic samples of BaTiO3+½xLn2O3+2mol%TiO2 (0.001≤x≤0.01) were prepared, whereLn is Y, Dy, Ho, Er or Y. The influence of rare earth on the resistivity and microstructure of the sampleswas investigated by the means of XRD, SEM and electric properties testing. The results showed that theresistivity of La-doped sample decreases when x= 0.003 compared with the undoped sample. However,the range of dopant concentration with Dy, Ho, Er or Y for semiconducting samples is wider, especiallyfor Y-doping. Minimum resistivity at room temperature was observed when x=0.003, which is namedafter the critical concentration. The experimental results indicated that below the critical concentration ofDy, Ho, Er or Y, the substitution took place in the barium sublattice with electronic compensation, and therare earth ions began to substitute for titanium gradually above the critical concentration. For Ho-dopedBaTiO3 ceramic, the resistivity jump (PTCR effect) near the Curie temperature was the highest in the caseof x=0.003. Fine-grained structure of the sample doped with 0.6mol% Dy led to the increase ofbreakdown field strength and dielectric constant of ceramic samples
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.465.pdf
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