Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3123-3129
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The etching of silicon in a pulsed plasma using SF6 gas is investigated. For short pulses the Si etch rate for a pulsed plasma is essentially the same as for the continuous plasma, in spite of the duty cycle being only 20%. An heuristic model of the etching has been developed which accurately predicts the pulsed plasma etch rates and sets limits on important parameters, such as the number of F atoms yielded by the SF6, the reaction probability of F with Si, and the overall efficiency of the etching process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339362
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