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  • 1
    Electronic Resource
    Electronic Resource
    Effect of signal modulated optical illumination on the Schrödinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4325-4333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of signal modulated optical radiation on the Schrödinger wave function has been studied in a quantum well in a n-AlGaAs/GaAs modulation doped field effect transistor (MODFET) and related device characteristics. Partial depletion of the active region of the modulation doped field effect transistor has been considered. At the heterojunction interface two different models for the quantum well has been assumed: (1) a triangular potential well and (2) a modified triangular potential well of finite depth. From the knowledge of frequency dependent Schrödinger wave function sheet concentration of the two-dimensional electron gas, the drain-source current of the MODFET and the transfer characteristics as a function of signal frequency have been evaluated. The frequency dependent current–voltage characteristics are compared with the published theoretical results since no experimental data are available on similar studies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287223
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of optical radiation in a photo-DOVATT (1987)
    Springer
    Applied physics 42 (1987), S. 311-315 
    Details
    ISSN: 1432-0630
    Keywords: 70.20 ; 72.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Avalanche photodetectors are very important solid-state detectors currently used in long-distance and wide-band optical communication systems, due to their faster speed of response compared to other solid-state photodiodes. Furthermore, it has been found that by using heterostructures one can improve both multiplication gain and quantum efficiency of such a device. DOVATT is a heterojunction impatt device in which there is one avalanche zone followed by two drift zones at different scattering limited velocities. The device is very useful for generation of high power in the X-band. The present paper examines the effect of optical radiation on such a device. Studies have been made on the frequency-response characteristics of the device. The results show that the device has the potentiality of becoming a powerful photodetector in optical communication systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616569
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  • 4
    Electronic Resource
    Electronic Resource
    Electron ionization rate in III–V ternary semiconductors (1987)
    Springer
    Applied physics 43 (1987), S. 105-109 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Theoretical calculations are presented for the ionization rate of electrons in III–V ternary semiconductor compounds considering alloy scattering and carrier-carrier interaction, in addition to optical phonon scattering and ionization scattering. However, alloy scattering is found to be a weak interaction. Fairly good agreement is obtained for Ga1−x In x As withx=0.14 and 0.53 with the experimental results and for Ga0.5 Al0.5 As with the existing theoretical result which used an indirect method. The alloy scattering potential has been taken in the form of energy band-gap difference. The calculations can be used for any ternary semi-conductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617961
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 6
    Electronic Resource
    Electronic Resource
    Noise characteristics of a superlattice avalanche photodiode (1989)
    Springer
    Applied physics 48 (1989), S. 331-334 
    Details
    ISSN: 1432-0630
    Keywords: 72.70 ; 79.20 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise generated due to randomness of multiplication process in the avalanche region of an Al x Ga1−x As/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618894
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  • 7
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 8
    Electronic Resource
    Electronic Resource
    Hot-electron drift velocity in III–V semiconductors under the condition of impact ionization (1987)
    Springer
    Applied physics 43 (1987), S. 53-60 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A calculation has been carried out for the drift velocity of electrons in the highfield region under the condition of impact ionization in III–V semiconductor compounds. The energy-balance equation of the one-electron model has been solved considering alloy scattering and carrier-carrier interaction, in addition to optical phonon and ionization scattering. Fairly good agreement is obtained for GaAs with the available experimental and Monte-Carlo results. Graphs for the high-field drift velocity has also been plotted for Ga1−x InxAs (x = 0.53) at different ratios of ionization mean-free path and optical phonon mean-free path. The plot of high-field drift velocity versus ionization rate reveals that the high-field drift velocity strongly depends on the ionization rate of carriers, and vice versa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615206
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of signal-modulated optical radiation on the characteristics of a Modfet (1993)
    Springer
    Applied physics 56 (1993), S. 335-341 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency (≲5 MHz) above which the effect of frequency is insignificant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324352
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  • 10
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    Equivalent circuit analysis of a system of coupled helical transmission lines in a complex environment (1983)
    American Institute of Physics
    Details
    Publication Date: 1983-07-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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