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  • 1
    Electronic Resource
    Electronic Resource
    Growth modes of ZnSe on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1164-1166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth modes of coherently strained ZnSe on GaAs are investigated as a function of the surface preparation and temperature. We find that the flattest and most uniform layers are grown at low temperatures, ∼300 °C, on surfaces exposed to high-temperature Se treatment. Nucleation rate depends on the surface coverage of Ga2Se3. High-temperature exposure of Ga-rich, (001)-oriented, GaAs to Se reduces the thickness required for the transition to a two-dimensional growth mode. The surface roughness increases with temperature as a result of three-dimensional island growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362709
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  • 2
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 3
    Electronic Resource
    Electronic Resource
    Low noise p-π-n GaN ultraviolet photodetectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2334-2336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of p-π-n GaN ultraviolet detectors. The peak responsivity at ∼363 nm is measured to be 0.1 A/W in the photovoltaic mode, and 0.14 A/W with a bias of −15 V. Speed measurements have shown the photoresponse to be RC-limited with the response time decreasing from 17.4 ns at zero bias to 10.3 ns at −6 V bias. For a 200×200 μ m2 device, we measure the dark current to be 2.7 pA at −3 V bias, and a noise density of less than 10−25 A2/Hz, the noise floor of the measurement. Extrapolating the noise data taken at higher reverse biases, we estimate the noise equivalent power to be 6.6×10−15 W/Hz1/2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120023
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  • 4
    Electronic Resource
    Electronic Resource
    Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1701-1703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent advances in the processing of complex oxide materials have allowed us to monolithically grow ferroelectrics, of the lead lanthanum zirconate titanate system, on a GaN/sapphire structure. The thickness of these ferroelectric films ranged from 0.5 to 5 μm. Strong electrooptic effect with field-induced birefringence, as large as 0.02, was measured for (Pb,La)(Zr,Ti)O3 layer grown on a GaN/sapphire structure. The applicability of the lead lanthanum zirconate titanate material as a light modulating medium, integrated with GaN-based devices, was further proven by demonstrating optical modulation of a laser beam in an Al/(Pb,La)(Zr,Ti)O3/GaN/sapphire structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373880
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  • 5
    Electronic Resource
    Electronic Resource
    Schottky barrier photodetectors based on AlGaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6×10−9 W over the total response bandwidth of 100 kHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120862
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  • 6
    Electronic Resource
    Electronic Resource
    Visible-blind GaN Schottky barrier detectors grown on Si(111) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 551-553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120755
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  • 7
    Electronic Resource
    Electronic Resource
    Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3673-3675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as 1013 cm−2. A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120477
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  • 8
    Electronic Resource
    Electronic Resource
    High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3566-3568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117247
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  • 9
    Electronic Resource
    Electronic Resource
    Se species in metalorganic molecular beam epitaxy of ZnSe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3311-3313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of ZnSe on GaAs by metalorganic molecular beam epitaxy with dimethylselenide and metal Zn sources is investigated. We show that the decomposition of dimethylselenide is pyrolithic and achieve cracking efficiencies as high as 90% at a cracker temperature of 1200 °C. With an efficient cracker high growth rates of ZnSe are obtained, limited only by the flux of dimethylselenide. Mass spectroscopic investigations demonstrate that atomic Se is the dominant group VI species. The high sticking probability of Zn to atomic Se results in metalorganic molecular beam epitaxy with high growth efficiency, exceeding that of conventional molecular beam epitaxy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116584
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  • 10
    Electronic Resource
    Electronic Resource
    Novel wet chemical etch for nanostructures based on II-VI compounds (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple wet chemical etch which produces stable and oxide-free surfaces of ZnSe is described. The etchant, a low pH solution of H2SO4:H2O2:H2O, reacts with ZnSe producing an amorphous layer of Se which grows into the semiconductor. The Se layer is then dissolved in aqueous (NH4)2S resulting in a S-passivated surface. The S-passivated layer is volatile and can be desorbed by heating the sample to 300 °C. The efficacy of this process is demonstrated by the formation of 20 nm wide quantum wires of CdZnSe/ZnSe with good optical properties. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119593
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