Publication Date:
2018-03-13
Description:
The authors investigated the silver nanowires (AgNWs) contact formed on p -GaN. Transmission line model applied to the AgNWs contact to p -GaN produced near ohmic contact with a specific contact resistance ( ρ sc ) of 10 − 1∼10 − 4 Ω·cm 2 . Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature ( I-V-T ) measurement revealed a strong temperature dependence with respect to ρ sc , indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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