ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Microtopographical variations of {111} and {100} crystal surfaces of single-crystalline diamond grown by microwave-plasma chemical vapour deposition of the CO-H2 reactant system were examined using scanning electron microscopy. A layer-by-layer epitaxial growth process was observed on both crystal surfaces. A number of epitaxial two-dimensional nuclei were formed at random on {111} surfaces, where small triangular growth layers spread with the same orientations as the outline of the original {111} basal plane. These spreading layers were found to leave an inverse triangular pit (so-called trigon) pattern as they joined each other. On the other hand, square growth layers spread in parallel directions to {100} basal plane, and they stacked in the 〈100〉 directions to form a pyramidal growth hillock.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01119732
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