ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The single crystal films of magnetic garnets are widely used in various microelectronics devices. The yttrium–iron and bismuth–gallium-substituted magnetic garnet films were grown by liquid phase epitaxy from supercooled solutions on the basis PbO+B2O3. As substrates for films the gadolinium–gallium garnet wafers crystallographically oriented in the range from (111)- to (110)-directions are used. In experiments such growth process parameters as supercooling temperature and angular velocity of substrate rotation were varied too. The parameters to be examined were thickness, growth rate, crystallografic, magnetic, and magnetooptical characteristics of the as-grown films. To analyze the growth process kinetics it was developed the model, including the terms (supersaturation CL−CE) of the first and second orders for description of surface crystallization reaction. The following expression was derived for epitaxial growth rate: f=D/ρδ [(CL−CE)+k1δ+D/2k2δ−(square root of) (k1δ+D)2+4k2δD(CL−CE)/2k2δ], where D is diffusion coefficient, δ is diffusion boundary layer thickness on the solid–liquid interface, ρ is film density, CL is concentration of garnet phase in the melted solution, CE is equilibrium concentration, km is surface reaction constant (kinetic coefficient) of order m in D ∂C/∂x (0,t)=km[C(0,t)−CE]m. A selected parameters are given for (YBi)3(FeGa)5O12 films grown under the same conditions: Orientatio−−−−−−−0°(110) 30′ 2° 30′ 2° 30′ 7° 30′ 90° (111) Growth rate, μm/min ... 0.1 0.075 0.08 0.16 0.26 Specific Faraday rotation, deg/cm...1526 1804 1713 1439 1953 The peculiarities of domain structure and properties of obtained films are discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362290
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