Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 1240-1242
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Excitonic transitions in metalorganic vapor phase epitaxially grown InxGa1−xP/In0.48(Al0.7Ga0.3)0.52P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (∼0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550–650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ΔEC∼0.75ΔEG.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110772
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