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  • 1
    Electronic Resource
    Electronic Resource
    Effects of melt temperature on the magnetic properties of FeCuNbSiB alloy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 865-870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of an Fe73.5Cu1Nb3Si13.5B9 alloy with nanoscale crystalline structure have been investigated as a function of the melt temperature. In the temperature range of 1240 to 1380 °C investigated in the present study, the permeability increases with the melt temperature. This result may be explained in terms of the reduction in the magnetic anisotropy as a function of the melt temperature. This is supported by the results for the remanence ratio, which also increases with melt temperature in a similar manner to the permeability. In the latter part of the work described in this paper, the relationships between the permeability and the coercivity, and the permeability and the remanence ratio have been investigated for the nanocrystalline alloy. It was found that the permeability is correlated more closely to the remanence ratio than the coercivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353298
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of Al on the magnetic properties of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloys : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6591-6593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Al on the soft magnetic properties of nanocrystalline Fe73.5−xAlxCu1Nb3Si13.5B9 alloy ribbons are investigated in the composition range of 0≤x≤1.0. The relative initial permeability at 1 kHz is found to increase by the addition of Al, and reaches the peak value at x=0.1. The coercivity decreases, rather significantly, with the Al content in the whole composition range investigated in the present work, the values of the coercivity being 12.5 mOe at x=0 and 9.3 mOe at x=1.0. The magnetic induction at an applied field of 10 Oe, however, decreases moderately by the introduction of Al, possibly due to the dilution effect. The improvement in the soft magnetic properties is considered to result from the reduction in the grain size of the α Fe-Si solid solution phase of the Al-added alloy ribbons, which has been observed by transmission electron microscopy. Another factor may be due to the decrease in the intrinsic magnetocrystalline anisotropy K1 as Al is added to the alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352574
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  • 3
    Electronic Resource
    Electronic Resource
    Defects and interfaces in an epitaxial ZnO/LiTaO3 heterostructure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5107-5112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO films were grown on a (011¯2) r-plane LiTaO3 substrate by electron cyclotron resonance-assisted molecular-beam epitaxy. The detailed structures of the interface and defects are investigated by high-resolution electron microscopy and image simulation. The epitaxial relationship was found to be [0001]ZnO(parallel)[01¯11]LiTaO3 and (112¯0)ZnO(parallel)(011¯2)LiTaO3. This epitaxial relationship corresponds to the c axis of ZnO parallel to the piezoelectric r-plane LiTaO3, which results in the enhanced electromechanical coupling factor. The interfaces were very smooth and structurally semicoherent with a comparative regular array of misfit dislocations at the interface accommodating a lattice mismatch of 9.49% when the incident electron beam is parallel to the [0001]ZnO(parallel)[01¯11]LiTaO3 direction. A high efficiency of transfer of acoustic energy across the interface is expected for surface acoustic wave devices with such an interface. The dominant defects commonly observed in ZnO films were found to be the type-I1 intrinsic stacking fault. The formation of stacking faults was shown to be growth kinetics on particular crystallographic planes during the initial stage of film growth. The effects of these defects and interfaces on electrical and optical properties for device applications are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313777
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of induced anisotropy in amorphous Sm–Fe based thin films by field sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5801-5803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Induced anisotropy with a large energy of 6×104 J/m3 is formed in an amorphous Sm–Fe based thin film by sputtering under an applied magnetic field of 500–600 Oe. The induced anisotropy results in a large anisotropy in magnetostriction, a strain anisotropy ratio reaching as high as 35, although intrinsic magnetostriction is affected only slightly. The large strain anisotropy allows one to realize a large strain in a particular direction and, hence, it is of significant practical importance. Induced anisotropy is also found to be formed by postannealing under applied magnetic field, but the magnitude of anisotropy energy formed is very small. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372527
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  • 5
    Electronic Resource
    Electronic Resource
    Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6364-6368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed structure of the interfacial layers of Ti/Ta/Al ohmic contacts to n-type AlGaN/GaN/sapphire are investigated by means of transmission electron microscopy. High-resolution electron microscopy (HREM), optical diffractograms, and computer simulations confirmed that TiN (∼10.0 nm) and Ti3AlN (∼1.4 nm) interfacial layers form at the interface between the Ti layer and the Al0.35Ga0.65N substrate by a solid state reaction during annealing for 3 min in N2 at 950 °C. The orientation relationship between Ti3AlN and Al0.35Ga0.65N was found to be: [011]Ti3AlN(parallel)[21¯1¯0]Al0.35Ga0.65N and (11¯1)Ti3AlN(parallel)(0001)Al0.35Ga0.65N. The cubic Ti3AlN interfacial layer has a lattice parameter of 0.411±0.003 nm with the space group Pm3m matching that of Al0.35Ga0.65N. A model of the atomic configurations of the Ti3AlN/Al0.35Ga0.65N interface is proposed. This model is supported by a good match between the simulated and the experimental HREM image of the Ti3AlN/Al0.35Ga0.65N interface. The formation of TiN and Ti3AlN interfacial layers appears to be responsible for the onset of the ohmic contact behavior in Ti/Ta/Al contacts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323517
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced in-plane anisotropy of Tb–Fe thin films by Sm addition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6244-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of Sm on the magnetic and magnetostrictive properties of Tb–Fe thin films are investigated. Four alloy systems, RxFe100−x (R=Tb+Sm) with x=39.8, 41.9, 43.7, and 45.8, are examined with Sm content varied from 0 (Sm free) to 2.2 at. %. In-plane anisotropy is found to be enhanced by the addition of Sm and the strongest in-plane anisotropy occurs in the Sm content range of 1 to 2 at. % depending on R content. At low magnetic fields of 1000 Oe and below, magnetostriction increases significantly with increasing Sm content, and reaches a maximum at an intermediate Sm content where well-developed in-plane anisotropy is observed. At higher magnetic fields of 3000–5000 Oe, however, no substantial improvement of magnetostriction occurs with the addition of Sm. The Sm content dependences of magnetization and coercive force are also examined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370234
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetostriction of melt-spun Dy-Fe-B alloys : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7021-7023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetostriction of melt-spun ribbons of Dyx(Fe1−yBy)1−x (x=0.2, 0.25, 0.3; 0≤y≤0.2) alloys is systematically investigated as a function of the wheel speed during melt quenching. As the wheel speed increases from 10 to 50 m/s, the magnetic softness improves with the wheel speed rather continuously for the alloys with the Dy content x=0.2 and 0.25 but it exhibits a maximum at the wheel speed of 30 or 40 m/s for the alloys with the highest B content (x=0.3). The softness also improves with the B content for a fixed wheel speed. Homogeneous and ultrafine grain structure is observed for the first time even in the as-spun state when the ribbons of the alloy Dy0.3(Fe0.8B0.2)0.7 are fabricated at the wheel speed of 30 m/s. The ribbon having the ultrafine grain structure exhibits good magnetic softness together with a high strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358074
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  • 8
    Electronic Resource
    Electronic Resource
    Threading dislocation reduction via laterally overgrown nonpolar (112¯0) a-plane GaN (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1201-1203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Threading dislocation density reduction of nonpolar (112¯0) a-plane GaN films was achieved by lateral epitaxial overgrowth (LEO). We report on the dependence of morphology and defect reduction on crystallographic stripe orientation. Stripes aligned along [0001] and [1¯100], the most favorable a-plane GaN LEO stripe orientations, possessed well-behaved, symmetric morphologies. Threading dislocation reduction via mask blocking was observed by transmission electron microscopy for [1¯100] stripes which had optimal rectangular cross-sections. Cathodoluminescence studies showed increased light emission for the overgrown regions in comparison to the window regions. The extent of lateral overgrowth of these stripes was asymmetric due to the opposing polarities of the vertical c-plane sidewalls. Conversely, threading dislocations propagated into the symmetric overgrown regions of [0001] stripes which possessed coexisting inclined and vertical {101¯0} facets. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498010
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of nonpolar (112¯0) a-plane GaN thin films grown on (11¯02) r-plane sapphire (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we describe the structural characteristics of nonpolar (112¯0) a-plane GaN thin films grown on (11¯02) r-plane sapphire substrates via metalorganic chemical vapor deposition. Planar growth surfaces have been achieved and the potential for device-quality layers realized by depositing a low temperature nucleation layer prior to high temperature epitaxial growth. The in-plane orientation of the GaN with respect to the r-plane sapphire substrate was confirmed to be [0001]GaN||[1¯101]sapphire and [1¯100]GaN||[112¯0]sapphire. This relationship is explicitly defined since the polarity of the a-GaN films was determined using convergent beam electron diffraction. Threading dislocations and stacking faults, observed in plan-view and cross-sectional transmission electron microscope images, dominated the a-GaN microstructure with densities of 2.6×1010 cm−2 and 3.8×105 cm−1, respectively. Submicron pits and crystallographic terraces were observed on the optically specular a-GaN surface with atomic force microscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493220
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3797-3799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties and microstructures of Ta/Ti/Al and Ti/Ta/Al contacts to n-AlGaN/GaN heterostructure field-effect transistor structures were investigated using the transmission line method and transmission electron microscopy. The specific resistivity (5.3×10−7 Ω cm2) of Ta/Ti/Al contacts is much lower than that (5.1×10−4 Ω cm2) of Ti/Ta/Al contacts, for the same heterostructure and similar metallization. The contact resistivity was found to depend on the thickness of the AlGaN layer, interfacial phase, and interface roughness. The formation of interfacial phases by solid-state reactions with the metal layer during annealing appears to be essential for ohmic behavior on n-III-nitrides suggesting a tunneling contact mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378312
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