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  • 1
    Electronic Resource
    Electronic Resource
    Effect of interface on the properties of Ti/NiFe thin films : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6504-6506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure, anisotropic magnetoresistance, and magnetic properties of Ti/Ni81Fe19 thin films have been investigated with respect to annealing temperatures (TA) up to 450 °C as well as to anneal times (tA). It has been shown that 120 °C is the optimum annealing temperature and that tA has no significant influence on the properties with annealing at 270 °C. Auger depth profiling was used to study interdiffusion kinetics. The diffusivity D and activation energy ε have been estimated at about 2.0×10−17 cm2/s and 1.69 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356951
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  • 2
    Electronic Resource
    Electronic Resource
    Layer thickness and temperature variation of the giant magnetoresistance in Fe/Ag multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 405-408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance ratio in Fe/Ag multilayers is increased dramatically with decreasing Fe layer thickness. This behavior can be explained in terms of interference of electronic Bloch waves due to interface roughness and lattice mismatch between Fe and Ag layers. At the same time, the interlayer coupling changes from ferromagnetic to antiferromagnetic when the Fe layer thickness is decreased. An anomalous temperature effect of magnetoresistance is also observed. The magnetoresistance ratio at 4.2 K is smaller than that at 300 K when the Fe layer thickness is larger than about 12 A(ring), which can be attributed to the presence of some superparamagnetic-like thin pieces at the interfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360616
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of microstructure on magnetoresistance of FeAg granular films : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6487-6489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance of FeAg granular films with optimum composition has been systematically studied as a function of film thickness. It was found that the giant magnetoresistance increases rapidly with increasing film thickness in the initial stage, and beyond about 500 A(ring) the improvements become limited. The saturation field was also found to rise with increasing film thickness. Transmission electron microscope studies showed that with the increase of film thickness the microstructure becomes more homogeneous, with smaller grains and fewer structural defects such as twins. A discussion of the influence of microstructure on magnetoresistance and saturation field is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358234
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  • 4
    Electronic Resource
    Electronic Resource
    Relation between microstructures and magnetic properties upon annealing in Fe50Mn50/Ni80Fe20 films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2052-2057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing-temperature-dependent change in the exchange bias and coercivity is investigated in Fe50Mn50/Ni80Fe20 films. It is interesting to note that, as the annealing temperature increases, the exchange bias first decreases, and then increases, and finally decreases for the case of annealing at the higher temperature. The coercivity will increase upon annealing at moderate temperature, but decrease upon higher-temperature annealing. We can qualitatively interpret the change of the magnetic properties with annealing temperature in connection to the microstructures by x-ray scattering technologies. The results show that both the large exchange bias field and low coercivity of Fe50Mn50/Ni80Fe20 films are dependent of not only the interfacial roughness but also the antiferromagnetic structure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493653
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic structure and magnetic properties of R2Fe17Nx (x=0,3,4) and R2Fe17Cx (x=0,3), (R=Sm,Nd) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6916-6918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and magnetic properties of rare-earth iron compounds R2Fe17Nx (x=0,3,4) and R2Fe17Cx (x=0,3) (R=Sm,Nd) have been studied by the self-consistent, spin-polarized local spin density functional theory calculations. Several cluster models were used to study the electronic structure of these compounds. For the R2Fe17Nx and R2Fe17Cx (x=0,3), the 9(e) sites in a unit cell are considered as occupied by N or C atoms. The additional N atom in the x=4 case is considered as occupying the 3(b) sites. The distribution of electrons and the magnetic moments for four kinds of crystalline inequivalent Fe atoms, Sm (Nd) and N(C) are calculated. The role of N or C atom in above compounds were discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352433
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  • 6
    Electronic Resource
    Electronic Resource
    Calculated electronic and magnetic structures of the new ternary rare-earth–iron nitride Nd2Fe17N3 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3911-3916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and magnetic structures of Nd2Fe17 and Nd2Fe17N3 have been calculated using the first-principle, spin-polarized orthogonalized linear combination of atomic orbitals method. Comparative studies of the two materials reveal important effects of the nitrogen atoms (at 9e site) on the electronic and magnetic structures. Results are presented for the total density of states, site-projected partial density of states and the spin magnetic moments on four nonequivalent Fe sites. The highest magnetic moments are found to be located on the 6c site for Nd2Fe17 and on the 9d site for Nd2Fe17N3, in agreement with the neutron and Mössbauer experiments. The variation trends of the magnetic moments on different Fe sites are discussed in terms of the separation between Fe and N atoms. Compared with Nd2Fe17, an increase in the exchange splitting of the Fe d band is found in Nd2Fe17N3, which accounts for its higher Curie temperature as observed in experiments. The calculated results show that the nitrogen atoms are charge acceptors in these compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350859
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  • 7
    Electronic Resource
    Electronic Resource
    Calculation of spin-reorientation temperature in Nd2Fe14B : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6146-6148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-reorientation phenomenon in Nd2Fe14B has been investigated using an angular dependent free energy approach. A magnetic Hamiltonian which includes the crystal electric field term and the exchange term has been established using realistic band structure results. The temperature dependence of the molecular field is accounted for by introducing the Brillouin function and the magnetic Hamiltonian is diagonalized within the ground state multiplet of the Nd ion. The eigenstates are then used to form the partition function for the free energy. At each temperature, the direction of the molecular field is obtained by searching for the minimum in the angular parameter space of the free energy. Our calculations show that for Nd2Fe14B, the net magnetic anisotropy direction is canted away from the c axis at a temperature close to the experimentally reported spin-reorientation temperature of 150 K. The temperature dependence of the magnetic structure is found to be very sensitive to the size of the second order crystal field parameter B20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350024
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic structure of Nd2Fe17N : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6928-6930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structures of ternary compound Nd2Fe17N with N atoms on 9e, 3b, and 18g sites are calculated and compared. The local moments on different Fe sites are in good agreement with experiments. The mechanism of increasing Curie temperature by N doping is checked by additional calculations with lattice expansion. The results show that the change in interatomic interaction is more important than the lattice expansion effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352437
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  • 9
    Electronic Resource
    Electronic Resource
    Pseudo-Hall effect in spin-valve multilayers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 747-749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistance and the pseudo-Hall effect in NiFe/Cu/NiFe/FeMn spin-valve multilayers were measured simultaneously in fields rotating in the film plane. Large pseudo-Hall voltages have been observed when the magnetization of the free layer was perpendicular to the sensing current, which was applied along the magnetization of the pinned layer. The pseudo-Hall voltages cannot be explained by treating the anisotropic magnetoresistance of the two permalloy layers independently. Such a cross effect of the free and pinned layers on the anisotropic magnetoresistance is dependent upon the angle between their magnetization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123111
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  • 10
    Electronic Resource
    Electronic Resource
    Fully oriented decagonal quasicrystalline thin films on crystalline substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 897-899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fully oriented AlCuCo decagonal quasicrystalline films on crystalline substrates were successfully prepared by multitarget magnetron sputtering followed by postannealing. The width of the rocking curve competes with that of a single crystal. To explain the result, we suggest that the full orientation of the films originates from the fact that only one atomic flat plane of the structure is available to match the flat surface of the substrate, which gives a minimum interface free energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119681
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