ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Columnar porous Si-face 6H-SiC substrates were prepared by a photo-electrochemical etchingmethod and applied as nanoimprint lithography (NIL) stamps. The diameter of the pores in theporous region was about 20 nm and the center-to-center separation between pores was about 60 nm.The columnar porous SiC substrates were subjected to a vapor phase silanization treatment wherebya monolayer of perfluorooctyltrichlorosilane (FOTS) was deposited in order to keep the stampsfrom sticking to the substrates during the imprint step. Subsequently, the porous SiC stamps wereused to imprint polymethylmethacrylate (PMMA) at elevated temperatures and pressures. Theimprinted PMMA could then be used to transfer the nanopattern on the columnar porous SiC toother substrates for various purposes; e.g. templates for GaN regrowth, catalysts for nanowiregrowth by vapor-liquid-solid type methods (VLS), etc. SiC is not typically used for NIL stampssince etch processing of SiC is less mature than that of Si. However, as demonstrated here, there isno reason why SiC cannot be used as a material for NIL stamps. The superior mechanical propertiesto Si make the use of SiC alluring as a master template for NIL processing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.871.pdf
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