Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1664-1666
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A generalized expression for charge carrier transport and absorption-limited sensitivity of x-ray photoconductors is derived by analytically solving the continuity equation for both holes and electrons considering the drift of electrons and holes in the presence of deep traps. The normalized sensitivity equation is applied to stabilized a-Se and HgI2. In the latter case, the sensitivity model is fitted to published data to determine the electron and hole ranges (6.4×10−6 cm2/V and 7×10−8 cm2/V, respectively) in screen-printed polycrystalline HgI2. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1454213
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