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  • 1
    Publication Date: 2024-04-11
    Description: Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.
    Keywords: TA1-2040 ; TA401-492 ; Q1-390 ; QC1-999 ; photonic integration ; additional waveguide system ; Wafer bonding ; germanium-based emitter ; telecommunications applications ; bio-chemical applications ; silicon photonics ; Bandgap tuning ; III-V semiconductors ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
    Language: English
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  • 2
    Publication Date: 2015-01-25
    Description: Creep and saltation are the primary modes of surface transport involved in the fluid-like movement of aeolian sands. Although numerous studies have focused on saltation, few studies have focused on creep, primarily because of the experimental difficulty and the limited amount of theoretical information available on this process. Grain size and its distribution characteristics are key controls on the modes of sand movement and their transport masses. Based on a series of wind tunnel experiments, this paper presents new data regarding the saltation flux, obtained using a flat sampler, and on the creeping mass, obtained using a specifically designed bed trap, associated with four friction velocities (0.41, 0.47, 0.55 and 0.61 m s −1 ). These data yielded information regarding creeping and saltating sand grains and their particle size characteristics at various heights, which led to the following conclusions: (i) the creeping masses increased as a power function (q = –1.02 + 14.19u * 3 ) of friction wind velocities, with a correlation (R 2 ) of 0.95; (ii) the flux of aeolian sand flow decreases exponentially with increasing height (q = a exp(–z/b)) and increases as a power function (q = –26.30 + 428.40 u * 3 ) of the friction wind velocity; (iii) The particle size of creeping sand grains is about 1.15 times the mean diameter of salting sand grains at a height of 0 to 2 cm, which is 1.14 times the mean diameter of sand grains in a bed; and (iv) the mean diameter of saltating sand grains decreases rapidly with increasing height whereas, at a given height, the mean diameter of saltating sand grains is positively correlated with the friction wind velocity. Although these results require additional experimental validation, they provide new information for modelling of aeolian sand transport processes. This article is protected by copyright. All rights reserved.
    Print ISSN: 0037-0746
    Electronic ISSN: 1365-3091
    Topics: Geosciences
    Published by Wiley
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  • 3
    Publication Date: 2016-03-08
    Description: We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge 1−x Sn x thin films (0.074 
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
    Publication Date: 2012-07-16
    Description: The mechanism of the interaction between bovine serum albumin (BSA) and ceftriaxone with and without zinc (II) (Zn2+) was studied employing fluorescence, ultraviolet (UV) absorption, circular dichroism (CD), and synchronous fluorescence spectral methods. The intrinsic fluorescence of BSA was quenched by ceftriaxone in a static quenching mode, which was authenticated by Stern-Volmer calculations. The binding constant, the number of binding sites, and the thermodynamic parameters were obtained, which indicated a spontaneous and hydrophobic interaction between BSA and ceftriaxone regardless of Zn2+. Changes in UV absorption, CD, and synchronous fluorescence spectral data are due to the microenvironment of amide moieties in BSA molecules. In the BSA-ceftriaxone-Zn2+ system, Zn2+ must first interact with ceftriaxone forming a complex, which inhibits BSA binding to ceftriaxone. The present work uses spectroscopy to elucidate the mechanism behind the interaction between BSA and ceftriaxone in the presence and absence of Zn2+. The BSA and ceftriaxone complex provides a model for studying drug-protein interactions and thus may further facilitate the study of drug metabolism and transportation.
    Print ISSN: 1687-9449
    Electronic ISSN: 1687-9457
    Topics: Chemistry and Pharmacology , Physics
    Published by Hindawi
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  • 5
    Publication Date: 2011-11-06
    Description: Analytical Chemistry DOI: 10.1021/ac202136n
    Print ISSN: 0003-2700
    Electronic ISSN: 1520-6882
    Topics: Chemistry and Pharmacology
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  • 6
    Publication Date: 2014-12-17
    Description: Background: Sheep are valuable resources for the animal fibre industry. Therefore, identifying genes which regulate wool growth would offer strategies for improving the quality of fine wool. In this study, we employed Agilent sheep gene expression microarray and proteomic technology to compare the gene expression patterns of the body side (hair-rich) and groin (hairless) skins of Aohan fine wool sheep (a Chinese indigenous breed). Results: Comparing the body side to the groin skins (S/G) of Aohan fine wool sheep, the microarray study revealed that 1494 probes were differentially expressed, including 602 more highly expressed and 892 less highly expressed probes. The microarray results were verified by means of quantitative PCR. Cluster analysis could distinguish the body side skin and the groin skin. Based on the Database for Annotation, Visualization and Integrated Discovery (DAVID), 38 of the differentially expressed genes were classified into four categories, namely regulation of receptor binding, multicellular organismal process, protein binding and macromolecular complex. Proteomic study revealed that 187 protein spots showed significant (p?
    Electronic ISSN: 1471-2156
    Topics: Biology
    Published by BioMed Central
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  • 7
    Publication Date: 2015-03-14
    Description: SnO has become an important earth-abundant transparent conductive oxide (TCO) with applications not only in photovoltaics but also in electrodes for energy storage. For optoelectronic applications, low fabrication temperature, high electrical conductivity, and low optical losses are highly desirable. This study presents self-assembled, ambipolar (i.e., n and p-type) nano-needle structured SnO x (x ≤ 1) thin films with high electrical conductivity, low infrared (IR) optical losses, and potentials for effective light trapping. These nano-needle structured SnO x films are fabricated through non-reactive co-sputtering of Sn and SnO 2 followed by crystallization annealing at low temperatures
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 8
    Publication Date: 2014-11-21
    Description: We demonstrate pseudo single crystal, direct-band-gap Ge 0.89 Sn 0.11 crystallized on amorphous layers at 18  μ m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge 0.89 Sn 0.11 patterns are suitable for monolithic 3D integration of active photonic devices on Si.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 9
    Publication Date: 2014-08-21
    Description: Metal oxidation at high temperatures has long been a challenge in cermet solar thermal absorbers, which impedes the development of atmospherically stable, high-temperature, high-performance concentrated solar power (CSP) systems. In this work, we demonstrate solution-processed Ni nanochain-SiO x (x 
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 10
    Publication Date: 2016-04-02
    Description: Cermet solar thermal selective absorber coatings are an important component of high-efficiency concentrated solar power (CSP) receivers. The oxidation of the metal nanoparticles in cermet solar absorbers is a great challenge for vacuum-free operation. Recently, we have demonstrated that oxidation is kinetically retarded in solution processed, high-optical-performance Ni nanochain-SiO x cermet system compared to conventional Ni-Al 2 O 3 system when annealed in air at 450–600 °C for several hours. However, for long-term, high-temperature applications in CSP systems, thermodynamically stable antioxidation behavior is highly desirable, which requires new mechanisms beyond kinetically reducing the oxidation rate. Towards this goal, in this paper, we demonstrate that pre-operation annealing of Ni nanochain-SiO x cermets at 900 °C in N 2 forms the thermodynamically stable orthorhombic phase of NiSi at the Ni/SiO x interfaces, leading to self-terminated oxidation at 550 °C in air due to this interfacial engineering. In contrast, pre-operation annealing at a lower temperature of 750 °C in N 2 (as conducted in our previous work) cannot achieve interfacial NiSi formation directly, and further annealing in air at 450–600 °C for 〉4 h only leads to the formation of the less stable (metastable) hexagonal phase of NiSi. Therefore, the high-temperature pre-operation annealing is critical to form the desirable orthorhombic phase of NiSi at Ni/SiO x interfaces towards thermodynamically stable antioxidation behavior. Remarkably, with this improved interfacial engineering, the oxidation of 80-nm-diameter Ni nanochain-SiO x saturates after annealing at 550 °C in air for 12 h. Additional annealing at 550 °C in air for as long as 20 h (i.e., 32 h air annealing at 〉550 °C in total) has almost no further impact on the structural or optical properties of the coatings, the latter being very sensitive to any interfacial changes due to the localized surface plasmon resonances of the metal nanostructures. This phenomenon holds true for Ni nanoparticle diameter down to 40 nm in Ni-SiO x system, where the optical response remains stable for 53 h at 550 °C in air. The oxidation vs. time curve also shows saturation behavior deviating from the kinetic Deal-Grove oxidation model. These results strongly suggest a promising approach to thermodynamically stable , anti-oxidation Ni/SiO x cermet absorbers via interfacial engineering.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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