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  • 1
    Electronic Resource
    Electronic Resource
    The influence of mask thickness on charging damage during overetching (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 572-577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Feature-scale charging simulations during gate electrode overetching in high-density plasmas reveal that the thickness of the insulating mask plays a critical role in charging damage. When thinner masks are used, the electron irradiance of the conductive part of the sidewalls increases, causing the charging potentials of the polysilicon lines to decrease, thus reducing the probability for catastrophic tunneling currents through the underlying oxide. Simultaneously, changes in the charging potential distribution at the bottom SiO2 surface cause a significant perturbation in the local ion dynamics which, in turn, adversely affects notching. Notches are predicted to form everywhere in a line-and-space structure, even when the lines are electrically isolated. The results suggest that the trend toward thinner (hard) masks—to keep the aspect ratio low as device dimensions shrink—should reduce oxide failure but at the cost of more severe notching. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365617
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  • 2
    Electronic Resource
    Electronic Resource
    The influence of surface currents on pattern-dependent charging and notching (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 683-689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface charge dissipation on insulator surfaces can reduce local charging potentials thereby preventing ion trajectory deflection at the bottom of trenches that leads to lateral sidewall etching (notching). We perform detailed Monte Carlo simulations of pattern-dependent charging during etching in high-density plasmas with the maximum sustainable surface electric field as a parameter. Significant notching occurs for a threshold electric field as low as 0.5 MV/cm or 50 V/μm, which is reasonable for the surface of good insulators. The results support pattern-dependent charging as the leading cause of notching and suggest that the problem will disappear as trench widths are reduced. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368123
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  • 3
    Electronic Resource
    Electronic Resource
    Aspect-ratio-dependent charging in high-density plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 566-571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of aspect ratio (depth/width) on charge buildup in trenches during plasma etching of polysilicon-on-insulator structures is studied by Monte Carlo simulations. Increased electron shadowing at larger aspect ratios reduces the electron current to the trench bottom. To reach a new charging steady state, the bottom potential must increase, significantly perturbing the local ion dynamics in the trench: the deflected ions bombard the sidewall with larger energies resulting in severe notching. The results capture reported experimental trends and reveal why the increase in aspect ratio that follows the reduction in critical device dimensions will cause more problems unless the geometry is scaled to maintain a constant aspect ratio. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365616
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of charging damage during interlevel oxide deposition in high-density plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 154-160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of pattern-dependent charging during interlevel dielectric (ILD) deposition in high-density plasmas reveal that the initial conformality of the ILD film plays a crucial role in metal line charging up and the subsequent degradation to the buried gate oxide to which the metal line is connected. Line charging occurs when the top dielectric is thick enough to prevent tunneling currents while the sidewall dielectric thickness still allows tunneling currents to flow to the metal line; the differential charging of the sidewalls, which induces the latter currents, is caused by electron shading. The results suggest that charging can be reduced by depositing a more conformal ILD film around the metal line and/or by increasing the ability of the film surface to dissipate charge. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368012
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  • 5
    Electronic Resource
    Electronic Resource
    Charging damage during residual metal overetching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 932-934 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of electron and ion temperatures on charging damage during residual metal (latent antenna) overetching in high-density plasmas is investigated by Monte Carlo simulations. The tunneling current through a thin gate oxide, electrically connected to the antenna, increases significantly with electron temperature, mainly as a result of changes in plasma current and ion energy distribution. However, the current decreases with ion temperature as ion shading: (a) directly decreases the ion flux to the antenna and (b) neutralizes the negative charge at the upper mask sidewalls, thus allowing more electrons to enter the pattern. The role of exposed antenna areas (trench bottoms and perimeter) is examined from the perspective of current imbalance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123413
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  • 6
    Electronic Resource
    Electronic Resource
    Prediction of multiple-feature effects in plasma etching (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2377-2379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charging and topography evolution simulations during plasma etching of dense line-and-space patterns reveal that multiple-feature effects influence critically the etch profile characteristics of the various lines. By including neighboring lines, the simulation predicts a peculiar notching behavior, where the extent of notching varies with the location of the line. Feature-scale modeling can no longer be focused on individual features alone; "adjacency" effects are crucial for understanding and predicting the outcome of etching experiments at reduced device dimensions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118878
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  • 7
    Electronic Resource
    Electronic Resource
    Aspect ratio independent etching of dielectrics (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 458-460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119578
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  • 8
    Electronic Resource
    Electronic Resource
    How tunneling currents reduce plasma-induced charging (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2928-2930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As semiconductor manufacturing moves towards smaller logic devices and thinner gate oxides, there is serious concern that pattern-dependent charging during plasma etching will impede progress by distorting etch profiles and by causing oxide breakdown. Simulations of the final overetch predict that the use of ultrathin oxides (≤5 nm), combined with a low substrate potential, will actually eliminate notching by enabling electron tunneling from the substrate to decrease surface charging potentials at the bottom of high aspect ratio trenches. Comparison with published experimental results validates the simulations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120218
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  • 9
    Electronic Resource
    Electronic Resource
    Ion mass effect in plasma-induced charging (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1942-1944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of charging and profile evolution during etching of high aspect ratio polysilicon gates in typical high-density plasmas containing heavy ions (e.g., BCl3+, Cl2+), predict a reduction in charging and notching when lighter ions (e.g., He+) are added. The reduction occurs because of the influence of the ion mass on the ratio R of the ion sheath transit time to the rf period, which determines the spread in the ion energy distribution at the wafer. The effect is most pronounced when R≤0.1–0.2 for light ions and, simultaneously, R≥0.6 for heavy ions; then, more light ions arrive at the patterned structure with low energies, where they help decrease localized charging. When the rf bias frequency is reduced so that R≤0.3 for all ions, the effect disappears. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119988
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  • 10
    Electronic Resource
    Electronic Resource
    Simulation of current transients through ultrathin gate oxides during plasma etching (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1945-1947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of electron tunneling through a 3 nm gate oxide during etching of dense patterns of gate electrodes in uniform high-density plasmas reveal two current transients, which occur: (a) when the open area clears, and (b) when the polysilicon lines just become disconnected at the bottom of trenches. The first charging transient is fast (controlled by charging) and may be followed by a steady-state current which lasts until the lines get disconnected. The second charging transient lasts longer; the magnitude of the tunneling current generally decreases as the sloped polysilicon sidewalls become straighter. Most of the damage occurs at the edge gate when the open areas are covered by field oxide; however, the edge gate suffers no damage when the 3 nm oxide extends into the open areas. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119989
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