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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5103-5106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of X-type Ba2Me2Fe28O46 (Me2-X, Me=Fe, Co, and Mn) hexagonal ferrite have been prepared by the classic ceramic method. Low-temperature magnetic properties, Curie temperatures, and distribution of divalent cations were studied. The substitution of Fe2+ ions with Co2+ and Mn2+ ions causes a decrease of the spontaneous moment μ and the Curie temperature Tc of X-type hexaferrites. The lower μ and Tc of Co2-X hexaferrite originate from the smaller magnetic moment of Co2+ ions. In the case of Mn2-X, the lower μ may be due to the valence state of Mn and the lower Tc may be caused by the fact that the space distribution of 3d electrons of Mn is different from that of Fe. In the Co2-X and Fe2-X compounds the Co2+ and Fe2+ ions enter the octahedral sites of spinel S blocks.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 372-375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of Ba2Me2Fe28O46 (Me2-X, Me=Ni, Cu, Mg, and Zn) hexagonal ferrite have been prepared by the classical ceramic method. Low-temperature magnetic properties and Curie temperature were investigated. The substitution of Fe2+ ion with Ni2+, Cu2+, and Mg2+ ions decreases spontaneous moment of Me2-X due to the preference of these ions for the octahedral sites of spinel S blocks. The substitution of Fe2+ ions with Zn2+ ions increases spontaneous moment due to the preference of Zn2+ ions for the tetrahedral sites. Lower Curie temperatures of Zn2-X, Cu2-X and Mg2-X compounds originate from the much small magnetic moment of these ions. Ni2+ ion has a magnetic moment smaller than Fe2+ ion, while Ni2-X compound has a Curie temperature as high as Fe2-X. It may be due to different space distribution of 3d electrons of Ni from Fe.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1247-1249 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of Ba2Cu2xZn2−2xFe28O46 (0≤X≤1) X-type hexaferrites were prepared by the classical ceramic method. Low-temperature magnetic properties and Curie temperature were investigated. The substitution of Zn2+ ion with Cu2+ ion leads to a decrease of the magnetic moment and an increase of Curie temperature due to the preference of Cu2+ ions for the octahedral sites of spinel S blocks.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7230-7233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic behavior of Nd10Fe84−xB6Inx (x=0,1,2) nanocomposites was investigated. It was found that a certain amount of indium (x=1) added to Nd10Fe84B6 magnets enhances the hard magnetic properties. The optimum coercivity and remanence ratio was increased from 5.0 kOe and 0.71 to 5.8 kOe and 0.83, respectively. The squareness of the hysteresis loop is improved greatly. The maximum magnetic energy product (BH)max increases remarkably from 12 to 18 MGOe. The origin for those enhancements is mainly attributed to the magnetically softened grain boundaries and enhanced crystallographical coherency by indium addition. The magnetic annealing is found to be helpful to enhance the coherency and coupling between hard and soft phases. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7075-7079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous oxide films with a composition of Bi2DyFe5O12 have been prepared by rf sputtering technique. The crystallization process was investigated using x-ray diffraction, differential thermal analysis, magnetic properties, magnetic resonance spectra, magneto-optical Faraday spectra, Raman spectra, and infrared reflection spectra. Amorphous oxide films exhibit very small magnetization and Faraday rotation at room temperature. At about 600 °C amorphous films crystallize to a garnet phase. With crystallization the magnetization and Faraday rotation increase rapidly. Raman and infrared spectra studies show the presence of tetrahedral sites in the amorphous films. As the annealing temperature increases, the peaks corresponding to octahedral and dodecahedral sites occur successively. It is of interest to note that amorphous oxide films containing Fe3+ ions show no magnetic resonance spectra at 71 and 300 K. The films annealed above crystallization temperature show a normal resonance spectrum. With increasing annealing temperature the linewidth decreases rapidly and the effective magnetization and anisotropy constant increase. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4114-4116 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of Ba2(ZnxFe1−x)2Fe28O46 [(ZnxFe1−x)2−X, 0≤×≤1] X-type hexaferrites were prepared by the ceramic method. Magnetization, magnetic moment, and Curie temperature were investigated. With increasing Zn content the magnetization and magnetic moment increase linearly, but the Curie temperature decreases. A discrepancy between experimental and theoretical values of the magnetic moment, which increases with increasing Zn content, was observed. The effect may be due to the partial occupation of the octahedral sites by the Zn2+ ions and resulting in random spin canting.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4651-4653 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-order Raman spectra of ZnWO4 single crystals have been obtained. All the vibrational frequencies are assigned by group theory. Among them the Bg modes at 269, 166, and 147 cm−1 and Ag mode at 124 cm−1 are reported for the first time. In view of x-ray structure data of ZnWO4, we suggest that the frequencies of vibrational modes can be assigned on the basis of analysis with octahedral WO6 as a starting point, instead of tetrahedral WO4.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6867-6870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we use transfer matrix and Airy function approaches to investigate the distribution of carriers within thin SiO2 films containing localized states for Si/SiO2/Si structure in detail. We show that the distribution of the probability density ||ψ||2 within oxide films has a shape with, at first, a monotonically exponential decrease from the Si/SiO2 interface, then arriving at a valley, and followed by a peak at the center for the case of "off'' resonance. When the carrier energy matches that of the eigenstate the probability density is exponentially decreased from the localized center on both sides. We show that there are two kinds of probability densities corresponding to resonant tunneling via a localized state within the barrier. On increasing the reverse applied field, the localization degree of the wave function decreases.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4858-4862 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoreflectance studies on GaAs/(Al,Ga)As multiple quantum wells grown on Si and Ge substrates. The sharp spectral features observed from various subband transitions indicate that good epilayer quality can be obtained on nonpolar substrates using suitable growth techniques. The experimental results agree well with calculated values based on the envelope function approximation, when the effect of residual strain resulting from the large difference in thermal expansion between GaAs and Si is taken into account.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3404-3406 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaCoTiFe10O19 films were prepared by sputtering. The as-sputtered films are amorphus and have a magnetization of 5 emu/cm3 and a coercivity of 700 Oe at room temperature. Compared with bulk BaCoTiFe10O19 hexaferrites, the magnetization is much smaller, but the coercivity is higher. After annealing at about 750 °C in an oxygen atmosphere, the films crystallize into an M-type hexagonal ferrite with a preferred orientation of the (110) plane being parallel to the film surface. The magnetization increases rapidly to 320 emu/cm3, but the coercivity decreases to 100 Oe. The amorphous samples with a large amount of Fe3+ ions show no ferromagnetic magnetic resonance spectra. After crystallization a well-defined ferromagnetic resonance spectrum occurs. © 1994 American Institute of Physics.
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