ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction study of growth and interface formation of the Ga1−xInxSb/InAs strained-layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2249-2252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth and interface formation of the Ga1−xInxSb/InAs (x≤0.4) strained-layer superlattices (SLSs) on GaSb(100) substrates have been studied by the reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy. A number of surface atomic structures were observed in the growth of the SLS: a (1×3) phases from the InAs epilayer surface; a (2×3) phase, a (2×4) phase and diffuse (1×1)-like phases from the InAs epilayer surface. The RHEED intensity variations in the formation of the interfaces have been discussed in terms of interface chemical reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351394
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial and interface properties of InAs/InGaSb multilayered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5908-5912 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the technique of molecular beam epitaxy to grow InAs on GaSb, GaSb on InAs, and InAs/InxGa1−xSb (0≤x≤0.4) multilayered structures and have performed a detailed investigation of the layers and resultant interfaces. The structures were grown on (100) oriented GaSb or GaAs substrates. Combined reflection high energy electron diffraction, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) studies indicate that Sb is persistently present on the InAs growth surface. XPS and AES analysis of InAs/GaSb heterojunctions indicates no compound formation at either the InAs/GaSb or GaSb/InAs interface. Secondary ion mass spectroscopy (SIMS) and XPS extinction profiles reveal the presence of approximately 5–10% As in the nominally pure GaSb layers. Analysis of InAs/GaSb/GaSb (100) structures by SIMS indicates that the As is incorporated during growth. The multilayer structures have been characterized by double crystal x-ray diffraction and the data has been modeled using kinematic formulations. We find that the experimental data is fitted by assuming atomically abrupt composition changes across the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350490
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Sb/GaSb structures: An example of V/III-V heteroepitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 21-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The requirements for heteroepitaxial growth of Sb on both GaSb and GaAs, and the subsequent growth of GaSb on Sb, using molecular-beam epitaxy are described. These systems serve as examples of the heteroepitaxy of group-V elements with III-V compounds, i.e., between materials utilizing different bonding and possessing different electronic properties. The quality of the films was determined using high-resolution four-circle x-ray diffraction, and comparisons were made between different structures. GaSb was found to grow (111) oriented on Sb (111) with an inverted stacking sequence. A simple epitaxial model is proposed to explain this. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359373
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interface properties of (In,Ga)Sb/InAs heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8379-8383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfaces between (In,Ga)Sb and InAs(100) grown by molecular-beam epitaxy have been investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy. The InAs on (In,Ga)Sb interface has been found to be significantly broader than the reverse one and the asymmetry is the result of mixing between arsenic and antimony. The studies of the growth surfaces have shown a persistent presence of antimony on an InAs surface suggesting a lower, antimony-rich, surface free energy. This energy imbalance indicates a driving mechanism behind the mixing of the group-V elements as the growth of InAs on (Ga, In)Sb is commenced. The band offset of the InAs on (Ga,In)Sb has been determined by XPS. The In 4d and Ga 3d to valence-band maximum binding energy differences for bulk InAs and GaSb were obtained by fitting the experimental valence-band density of states (VBDOS) to the experimentally broadened, theoretical VBDOS. The core-level separation between In 4d and Ga 3d peaks from the InAs/GaSb structure was determined by fitting Gaussian–Lorentzian functions to the peaks. The band offset was determined to be 0.62±0.1 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362557
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2409-2410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In recent photoemission and Raman experiments interfacial layers of indium telluride together with liberated antimony were found to be formed during the molecular beam epitaxial growth of CdTe on InSb(100) at elevated substrate temperatures (TS≥200 °C). We have previously suggested that the application of a sufficiently large Cd overpressure during growth is likely to suppress the formation of interfacial layers and enable successful epitaxial growth of CdTe. In this letter we present Raman spectra revealing that a flux ratio of Cd/Te=3 during growth effectively suppresses indium telluride formation leading to largely improved InSb/CdTe interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100245
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxial growth and characterization of In2Te3 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1936-1941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of the molecular-beam-epitaxial growth of In2Te3. The unique structure of In2Te3, with 1/3 of the In sublattice sites vacant, is of fundamental interest for molecular-beam-epitaxial growth dynamics. We show that thin-film (500–7000 A(ring)) single-crystal In2Te3 can be grown successfully on InSb(100) homoepitaxial layers at substrate temperatures of 300–350 °C and Te/In flux ratios of 3/2 to 5/2. Epitaxy has been monitored by reflection high-energy electron diffraction and the stoichiometry of the grown layers assessed by Auger spectroscopy and energy dispersive x-ray analysis. Raman studies of the layers are presented and compared with a bulk In2Te3 standard. Crystal structure has been determined by x-ray diffraction using Weissenburg and oscillation photographs, confirming that the layers have a fcc crystal structure with a lattice parameter of 18.50 A(ring), in excellent agreement with the bulk value. Band-gap measurements have been performed on the layers by photoreflectance. We report a value for the α-In2Te3 band gap of 1.19 and 1.31 eV at 300 and 77 K, respectively. Molecular-beam-epitaxial growth of InSb and CdTe on epitaxial In2Te3 films for fabrication of InSb/In2Te3/InSb and InSb/In2Te3/CdTe multilayers has been studied. Auger depth profiling of the resulting layers shows severe intermixing into the In2Te3. These results are supported by thermodynamic considerations of the InSb-In2Te3 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342881
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxial growth of InSb/CdTe heterojunctions for multilayer structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1873-1877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the technique of molecular-beam epitaxy to grow layers of CdTe on InSb and InSb on CdTe and have performed a detailed analysis of the layers and their interfaces using Auger depth profiling and reflection high-energy electron diffraction. We show that significant improvements in interfacial quality can be obtained by the proper choice of fluxes during growth. The use of a Cd/Te flux ratio of 3:1 (JCd/JTe=3) during the growth of CdTe has enabled epitaxy at a substrate temperature of 300 °C. Interfaces formed with this flux ratio are abrupt, in sharp contrast to those formed under stoichiometric flux conditions (JCd/JTe=1). Subsequent growth of InSb at a substrate temperature of 300 °C on thin CdTe epilayers (400 and 800 A(ring)) is examined as a function of the InSb growth rate and Sb/In flux ratio. Quality of the interfaces shows a progressive improvement with increasing InSb growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341737
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Sb/GaSb heterostructures and multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully synthesized heterojunctions and elementary multilayered structures of the semimetal-semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivated in part by the potential for producing an indirect narrow-gap semiconductor, in which a confinement-induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit the long mean free path in Sb (up to 2 μm) in studying quantum transport phenomena. X-ray diffraction confirms the ordered growth of GaSb/Sb/GaSb multilayers, and field-dependent magnetotransport measurements yield electron and hole mobilities ≥3×104 cm2/V s in Sb thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109792
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Enhanced quantum interference effects in parallel Josephson junction arrays (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3330-3332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the total critical current as a function of applied magnetic flux for a superconducting interferometer consisting of many Josephson junctions in parallel. An enhancement and narrowing of the periodic principal maxima in the critical current versus flux characteristic is predicted as the number of junctions in parallel increases, even when the effects of finite self- and mutual inductances and nonuniformity of the junction critical currents are included in the calculations. The possible application of the superconducting quantum interference grating, or SQUIG, for the detection of magnetic flux is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105721
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    facet.materialart.
    Unknown
    Enhanced quantum interference effects in parallel Josephson junction arrays (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-12-16
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...