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  • 1
    Electronic Resource
    Electronic Resource
    A very low current scanning tunneling microscope (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4876-4879 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The applications of the scanning tunneling microscope (STM) in air are usually restricted to good conducting materials as clean metals, doped and passivated semiconductors, or to some molecular adsorbates deposited onto graphite. In order to study poor conducting materials as biological molecules, we have built a very low current STM. This instrument can routinely be operated at 0.1 pA while having a bandwidth of 7 kHz. The advantages of using very low currents are illustrated by imaging 5-nm-thick purple membranes. These membranes can only be imaged at currents smaller than 2 pA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146168
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  • 2
    Electronic Resource
    Electronic Resource
    Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1898-1903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-size water bridges have been used to confine the oxidation of silicon surfaces with a noncontact atomic force microscope. The formation of a water bridge between two surfaces separated by a gap of a few nanometers is driven by the application of an electrical field. Once a liquid bridge is formed, its length and neck diameter can be modified by changing the tip-sample separation. The liquid bridge provides the ionic species and the spatial confinement to pattern Si(100) surfaces in noncontact force microscopy. The method is applied to write arrays of several thousands dots with a periodicity of 40 nm and an average width of 10 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370985
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  • 3
    Electronic Resource
    Electronic Resource
    Tip motion in amplitude modulation (tapping-mode) atomic-force microscopy: Comparison between continuous and point-mass models (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1646-1648 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the influence of high-order frequency components in the operation of an amplitude modulation atomic-force microscope (AFM). A comparative study of point-mass and continuous models is performed to describe the tip motion. The tip–surface interaction force excites high-order frequency components whenever a higher harmonic of the excitation force is close to an eigenmode of the cantilever beam. The strength of those components depends on the set point amplitude and the fundamental resonance frequency of the cantilever. However, for standard operating conditions with quality factors in the 102–103 range, higher-order components are about three orders of magnitude smaller than the component at the excitation frequency. We conclude that point-mass models are suitable to describe the operation of a tapping-mode AFM in air environments. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456543
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  • 4
    Electronic Resource
    Electronic Resource
    Nano-oxidation of silicon surfaces: Comparison of noncontact and contact atomic-force microscopy methods (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 424-426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local oxidation lithography by atomic-force microscopy is emerging as a powerful method for nanometer-scale patterning of surfaces. Here, we perform a comparative study of contact and noncontact atomic-force microscopy (AFM) oxidation experiments. The comparison of height and width dependencies on voltage and pulse duration allows establishing noncontact AFM as the optimum local oxidation method. For the same electrical conditions, noncontact AFM oxides exhibit higher aspect ratios (0.04 vs 0.02). The smallness of the liquid meniscus in noncontact AFM oxidation produces smaller oxide widths. We also report a slower oxidation rate in contact AFM oxidation. We explain this result by introducing an effective energy barrier (∼0.14 eV) that includes the mechanical work done by the growing oxide against the cantilever (∼0.01 eV). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385582
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  • 5
    Electronic Resource
    Electronic Resource
    Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3427-3429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local oxidation of silicon surfaces by noncontact atomic-force microscopy is an emerging and promising method for patterning surfaces at the nanometer scale due to its very precise control of the feature size. Here, we study the voltage and pulse duration conditions to generate a motive of a given height with the minimum lateral size. We find that for a fixed tip–sample separation, the combination of short pulses and relatively high voltages (∼20 V) produces the highest height:width ratio. The application of relatively high voltages produces a fast growth rate in the vertical direction while the lateral diffusion of oxyanions is inhibited for short pulses. The above results are applied to generate lines of tens of microns in length with an average width at half maximum of about 10 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126856
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  • 6
    Electronic Resource
    Electronic Resource
    Local oxidation of silicon surfaces by dynamic force microscopy: Nanofabrication and water bridge formation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2295-2297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local oxidation of silicon surfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. It is demonstrated that during the oxidation, tip and sample are separated by a gap of a few nanometers. The existence of a gap increases considerably the effective tip lifetime for performing lithography. A threshold voltage between the tip and the sample must be applied in order to begin the oxidation. The existence of a threshold voltage is attributed to the formation of a water bridge between tip and sample. It is also found that the oxidation kinetics is independent of the force microscopy mode used (contact or noncontact). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121340
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  • 7
    Electronic Resource
    Electronic Resource
    Relationship between phase shift and energy dissipation in tapping-mode scanning force microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2926-2928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Force curves taken during a load–unload cycle show the presence of a hysteresis loop. The area enclosed by the loop is used to measure the energy dissipated by the tip-sample interaction in tapping-mode scanning force microscopy. The values of the energy loss obtained from force curves are compared with the results derived from a model based on phase shift measurements. The agreement obtained between both methods demonstrates that for the same operating conditions, the higher the phase shift the larger the amount of energy dissipated by the tip-sample interaction. It also confirms the prediction that phase-contrast images can only arise if there are tip-sample inelastic interactions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122632
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of elastic and inelastic interactions on phase contrast images in tapping-mode scanning force microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of phase contrast in tapping-mode scanning force microscopy on elastic and inelastic interactions is studied. The cantilever–tip ensemble is simulated as a driven, damped harmonic oscillator. It is found that for tip–sample elastic interactions, phase contrast is independent of the sample's elastic properties. However, phase contrast associated with elastic modulus variations are observed if viscous damping or adhesion energy hysteresis is considered during tip–sample contact. The phase shift versus tip–sample equilibrium separation was measured for a compliant material (polypropylene) and for a stiff sample (mica). The agreement obtained between theory and experiment supports the conclusions derived from the model. These results emphasize the relevance of energy dissipating processes at the nanometer scale to explain phase contrast imaging in tapping-mode force microscopy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120039
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer-scale modification of biological membranes by field emission scanning tunneling microscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1162-1164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Manipulation and modification at atomic and nanometer scales of some semiconductor and metallic samples has been made possible by scanning tunneling microscopy (STM). This has generated novel approaches for designing new devices at nanometer scale. The poor electronic conductivity of biological molecules has prevented the extension of those methods to them. Here, it is described how a low current STM operated in the field emission regime allows, reproducible imaging and selective modification of biological membranes. A method is presented (i) to visualize at high-resolution hydrated purple membrane sheets, (ii) to produce nanometer-scale marks on them, and (iii) to image the altered membranes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110839
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  • 10
    Electronic Resource
    Electronic Resource
    Near field emission scanning tunneling microscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3022-3024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The close proximity between probe and sample in a scanning tunneling microscope interface may produce unwanted modifications of the interface. This is particularly severe when working with soft materials, as molecular films or biomolecules. Here, we propose the operation of the scanning tunneling microscope in the near field emission regime as an effective method to overcome those problems. A theoretical description of the probe–sample interface in the near field emission regime predicts subatomic resolution in the direction normal to the surface and lateral resolution of 3 nm for tip–sample separations of 3–5 nm. Furthermore, atomic resolution is demonstrated by imaging steps of carbon atoms. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112496
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