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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 25 (1999), S. 573-576 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High-resolution Auger electron spectroscopy is used to study the adsorption of sulfur on a $$(10\overline 1 0)$$ Re surface and to determine the regions of thermal stability of the resulting adsorption states. The formation of surface sulfide is observed and its stoichiometry, Re2S, and the absolute sulfur concentration on the rhenium surface N S =(6.0±1)×1014 atom/cm2 are determined. It is shown that the surface sulfide is destroyed by thermal desorption of sulfur from the rhenium surface and the desorption activation energy is estimated as E d =(3.3±0.2) eV for a coverage close to the surface sulfide and E d =(4.9±0.2) eV in the limit θ→0.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-879X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Isolated atoms of carbon evaporated on to Pt(111) react with hydrogen atT⩾170 K to form methine species, characterized with vibrational modesv(CH) at 2960 and δ(CH) at 800 cm−1. The high reactivity ofC ads is in line with their ability to take part as intermediates in the metanation reaction. CHads species are stable up toT ≈ 500 K; further heating leads to their dissociation accompanied by H2 desorption and formation of unreactive graphite-like islands.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 26 (2000), S. 510-513 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Adsorption of PCl3 molecules on the (100)W surface has been studied over a wide temperature range from 300 to 2000 K. It is shown that adsorption at T〉1100 K results in the formation of a surface tungsten phosphide with the WP composition and a surface concentration of phosphorus atoms of (1±0.15)×1015 cm−2. Adsorption of silicon atoms on the surface phosphide at 1300 K results in the displacement of phosphorus atoms from the surface and their replacement by silicon atoms.
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  • 4
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Two-dimensional graphite films on $$(10\bar 10)$$ were produced in ultrahigh vacuum by adsorption of benzene vapor on the metal heated to T=1800 K. High-resolution Auger spectroscopy used for the film characterization showed the film indeed to have graphitic structure and monolayer thickness. The surface topography was studied in air by scanning-tunneling microscopy. The monolayer thickness was confirmed, and it was shown that a two-dimensional graphite film has a complex topography featuring numerous hillocks with linear dimensions of ∼3000 Å and height differences of ∼300 Å, while retaining graphitic structure on the atomic scale. The lack of planarity of such a film at room temperature is considered to be due to deformation occurring under cooling from the temperature of formation down to 300 K, which is caused by the difference in thermal expansion coefficients between the graphite sheet and rhenium.
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  • 5
    ISSN: 1090-6487
    Keywords: 61.46.+w ; 68.35.Bs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The process of simultaneous intercalation of atoms differing in nature, namely, cesium and potassium, into a two-dimensional graphite film on a metal is studied. It is shown that, on being adsorbed simultaneously at room temperature, atoms of both sorts spontaneously penetrate into the space between the graphite film and the metal surface in approximately equal concentrations and remain there on heating up to graphite layer destruction temperatures (∼2000 K). Upon the thermal destruction of the layer, potassium atoms escape first and cesium atoms escape thereafter. A physical description of the processes is developed.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 42 (2000), S. 377-380 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The coadsorption of silicon and Group VI elements on the Re $$(10\bar 10)$$ surface is investigated by the 1 high-resolution Auger spectroscopy. It is demonstrated that, upon deposition of silicon on the surface oxide or surface sulfide, a part of silicon atoms deposited interacts with chalcogen atoms to be desorbed in the form of SiO or SiS molecules. The rest of silicon atoms occupy the becoming free adsorption sites, thus forming surface silicide. The silicon atoms incorporated into the surface silicide loose their reactivity and coexist on the surface together with adsorbed chalcogen atoms.
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  • 7
    ISSN: 1090-6487
    Keywords: 81.05.Tp ; 81.15.Ef ; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The initial stages of growth of films of C60 molecules on a (100)Mo surface are studied by high-resolution Auger spectroscopy and atomic force microscopy under ultrahigh vacuum conditions. It is shown that at T〈750 K, after a specific coating with molecular density 1.5×31014 cm−2, which the authors term a high-temperature (HT) monolayer, has formed on the surface, crystallites in the form of “towers” with flat tops grow on the surface. The fraction of the area occupied by towers depends strongly on the substrate temperature and the flux density of the molecules on the surface but is virtually independent of the exposure time. At temperatures T〉760 K the C60 molecules making up the crystallites desorb, while the molecules making up the HT monolayer decompose, and the carbon released is dissolved in the interior of the substrate.
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  • 8
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The formation and destruction of the surface silicide on W(100) after cleaning of the sample surface and bulk in various regimes is studied by high-resolution Auger electron spectroscopy. It is shown that the cleanness of the bulk has practically no influence on the laws governing the formation of the surface silicide when Si atoms are adsorbed on a heated W surface and that almost up to completion of its formation all the silicon atoms impinging on the surface, from the very first, remain on it and are incorporated into the surface silicide. The destruction of the surface silicide depends in a definite manner on the state of the bulk, and at T=1400 K it is apparently limited in the early stages by the passage of Si atoms from the surface to the subsurface layer and in subsequent stages by the diffusion of silicon within the substrate. The bulk silicon density that limits the destruction of the surface silicide is estimated.
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  • 9
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An analysis is made of some general laws governing a new physical effect, i.e., the spontaneous penetration of particles (atoms, C60 molecules) adsorbed on a two-dimensional graphite film on a metal (Ir, Re, Pt, Mo,...) to beneath the graphite film (intercalation). It is shown that atoms having low ionization potentials (Cs, K, Na) intercalate a two-dimensional graphite film on iridium at T=300–400K with an efficiency χ≈0.5, accumulating beneath the film to a concentration of up to a monolayer. Atoms having high ionization potentials (Si, Pt, Ni, C, Mo, etc.) intercalate a two-dimensional graphite film on iridium at T≈1000K with an efficiency, χ≈1, forming beneath the film a thick intercalate layer which is strongly bonded chemically to the metal substrate but is probably weakly bonded to the graphite monolayer by van der Waals forces. The presence of a graphite “lid” impeding the escape of atoms from the intercalated state up to record high temperatures T∼2000K leads to superefficient diffusion (with an efficiency close to one) of various atoms (Cs, K) into the bulk of the substrate (Re, Ir).
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics 44 (1999), S. 1371-1376 
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The adsorption, initial stages of film growth, and transformation of an adlayer of C60 molecules on a (100) Mo surface upon heating are studied under ultrahigh-vacuum conditions. It is shown that the C60 molecules remain intact in the adsorbed state up to 760 K. Layer-by-layer growth of a fullerite film is observed at room temperature, while tower-shaped crystallites grow up from a loosely packed monolayer with an approximate concentration of C60 molecules equal to (1.3±0.2)×1014 molecules · cm−2 at 500–600 K. In the latter case the percentage of the surface occupied by them depends on the temperature and the impinging flux density of fullerene molecules, but after a certain stationary value has been achieved, it scarcely depends on the exposure time.
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