ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
ZnO bulk crystal wafers, undoped and doped with various impurities of Ga, Er, Co, Ho,Fe, Mn, and co-doped Mg-Li, have been prepared by a modified melt growth method, andcharacterized by optical techniques of Raman scattering, photoluminescence and UV-visibletransmission. Their wurtzite structures were confirmed, with a small degree of crystallineimperfection. It is shown that with some dopants, such as, Co and Fe, the electronic energy gap isaffected much less than the optical absorption gap. Computer analysis has helped greatly in obtaininguseful information of the optical properties of the ZnO bulk materials
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1567.pdf
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