ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the epitaxial growth mechanism of ZnTe on (001) CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3104-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stages of the growth of highly strained ZnTe on (001) CdTe are investigated by reflection high energy electron diffraction, HRTEM (high resolution transmission electron microscopy), x-ray photoelectron spectroscopy, and x-ray double diffraction. A precise study of the factors influencing the critical thickness is presented, with emphasis on the effect of Zn pre-exposure of the CdTe surface on the subsequent ZnTe growth. Below the critical thickness small lattice distortions attributed to a nontetragonal elastic distortion are detected. An exposure of the (001)CdTe surface to a Zn flux leads to the desorption of the Cd atoms present on the top of the surface and to the formation of a c(2×2) reconstructed surface with half a monolayer of Zn on the top of the surface. Finally, the morphology of an ultrathin strained ZnTe layer embedded in a (001)CdTe matrix will be discussed using results obtained from analysis of the digitized HRTEM image. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358661
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Interface dilution and morphology of CdTe/MnTe superlattices studied by small- and large-angle x-ray scattering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7266-7274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed small- and large-angle x-ray scattering experiments on CdTe/MnTe superlattices. The Fresnel optical method and the distorted wave Born approximation were used to extract from small-angle measurements out-of-plane and in-plane information about the interfaces. Specular reflectivity shows that the interface roughness is quite high (about 7 Å) for all superlattices. The effective MnTe concentration, directly determined from the refractive index profile, is successfully used to simulate the structured nonspecular scattering, and to determine the lateral correlation length of the interface roughness (about 1500±750 Å). Moreover, it is shown that the layers are almost completely correlated over the sample thickness. The thickness fluctuations along the growth direction are estimated from the analysis of the large-angle (004) reflection, and the effective MnTe profile is also checked by dynamical simulation. It is shown that the small- and large-angle results are in good agreement. The MnTe profile width deduced from x-ray reflectivity is slightly overestimated due to the large integration area of this technique. An estimation of the local MnTe profile is given. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372979
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Large and small angle x-ray scattering studies of CdTe/MgTe superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1951-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed large and small angle x-ray scattering measurements on CdTe/MgTe superlattices. The individual thicknesses of the CdTe and MgTe layers, together with the period dispersion and the crystallographic quality of the stacking, were extracted from large-angle x-ray diffraction. The Fresnel optical method and the distorted wave Born approximation were used to analyze the small angle x-ray scattering data. Specular reflectivity shows that the interface roughness is quite large for the two CdTe/MgTe superlattices grown either by conventional molecular beam epitaxy or by atomic layer epitaxy with however in the latter case a strong asymmetry between the direct and inverted interfaces. The effective MgTe concentration is determined from the refractive index. A model of correlated interface profiles is successfully used to simulate the diffuse scattering, and to gain access to the lateral correlation length of the roughness (Λ(parallel)=1500±750 Å for both samples); moreover, we demonstrate that the layers are almost completely correlated over the sample thickness in the growth direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370992
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ordering of Ge quantum dots with buried Si dislocation networks (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1474601
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Anisotropic relaxation during the first stages of the growth of ZnTe/(001) CdTe strained layers studied by reflection high energy electron diffraction (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3456-3458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stages of the growth of highly strained ZnTe on (001)CdTe are studied by reflection high energy electron diffraction (RHEED) with real-time monitoring of the surface in-plane lattice spacing and of the width of the streaks along the [100], [110], and [11¯0] azimuths. A large, oscillating, elastic relaxation is measured below the critical thickness (≈5 ZnTe monolayers) in the [11¯0] azimuth while a small excess of tensile stress with regard to the CdTe substrate is observed in the [110] azimuth. These effects are attributed to an anisotropic nontetragonal elastic distortion at the free edges of elongated 2D ZnTe-monolayer islands. For large deposition times (i.e., after the critical thickness), the RHEED observation gives very good information about the nature of the dislocations occurring in the multiplication process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113386
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of the first-stage relaxation in ZnTe/(001)CdTe strained layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3631-3633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stages of the growth of highly strained ZnTe on (001) CdTe are studied in details by reflection high-energy electron diffraction analysis. Below the critical thickness, small lattice oscillations attributed to a nontetragonal elastic distortion are observed on a system in tensile stress. An effect of Zn excess pressure on the critical thickness is demonstrated. Exposure at 280 °C of the CdTe(001) surface under Zn flux leads to the formation of a c(2×2) Zn terminated surface with about 50% Zn coverage. Such a pretreatment reduces the critical thickness by about half a monolayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111227
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    X-ray reflectivity of ultrathin twist-bonded silicon wafers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3509-3511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Si (001) layers (〈15 nm) are hydrophobic bonded to a full 4 in. Si (001) wafer. The interface quality and surface roughness, checked by specular x-ray reflectivity, are very good. This technique, well suited to measure the homogeneity thickness, shows that the samples have very small thickness fluctuations, and no extended defects. Quantitative analysis proves that the interfacial layer resulting from the bonding is very thin (about 8 Å). Its atomic density is significantly different from bulk Si only for large bonding twist angles (〉5°). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125371
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of Au(110) layers on MgO(110) substrates
    Amsterdam : Elsevier
    Applied Surface Science 68 (1993), S. 203-207 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(93)90122-R
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    MBE growth of Fe(211)/Au(110) multilayers on MgO(110) substrates
    Amsterdam : Elsevier
    Journal of Magnetism and Magnetic Materials 121 (1993), S. 57-59 
    Details
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0304-8853(93)91148-Z
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    MBE growth of Fe(211)/Au(110) multilayers on MgO(110) substrates
    Amsterdam : Elsevier
    Journal of Magnetism and Magnetic Materials 121 (1993), S. 57-59 
    Details
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-8853(93)91148-Z
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...