Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5249-5252
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical conductivities of n-doped silicon and, in particular Si:Bi, have been investigated for doping levels greater than the impurity critical concentration Nc for the metal-nonmetal transitions. A general feature of the conductivity for concentration normalized to Nc is presented in the order σ(Bi)(approximately-greater-than)σ(As)(approximately-greater-than)σ(P)(approximately-greater-than)σ(Sb). For Si:Bi, the value of Nc is calculated for different criteria. The mobility of electrons presents a lower value compared to Si:P. The results for Si:P and Si:As are compared to the experimental data available in the literature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357175
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