ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electrical properties of buried oxide–silicon interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1605-1610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic approach of the origin of the generation-recombination mechanism (GR) at the back interface of buried oxide in separation by implanted oxygen (SIMOX) substrates is presented. Metal oxide semiconductor capacitors fabricated on the oxide are synthesized by SIMOX technique and evaluated by C–V, I–V and deep level transient spectroscopy (DLTS) techniques. A shift of flat-band voltage to negative values was observed, denoting the presence of a high density of positive charges into the oxide. They are mainly due to the large concentration of E′ centers. The concentration of interface states was high enough (1012 cm−2 eV−1) compared to that of thermal oxides and to govern the generation-recombination mechanisms at the interface. The activation energy of GR mechanism is very close to the half of Si energy gap. This mechanism affects the temperature formation of the inversion layer. The hold-off time of buried oxide capacitors was obtained by DLTS generation spectra analysis. Oxide charge instability was detected after stress under a relatively low electric field at 450 K. The generation-recombination mechanism was changed after stress, affecting also the hold-off time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362958
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface properties (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2793-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crucial roles of high-temperature annealing (1300–1340 °C) and ambient gas are emphasized by the electrical properties of structure fabricated on silicon-on-insulator by deep oxygen implantation. Hall-effect measurements down to 77 K, as well as the characteristics of front channel and back channel transistors, show that the silicon overlay is quasihomogeneous, as a consequence of drastic improvement of the buried interface region. This is illustrated by the high carrier mobilities (1250 cm2 V−1 s−1 for electrons at 300 K), the dominance of acoustic phonon scattering, and the interface parameters that are more favorable than after low-temperature anneals and similar to those of bulk Si. The properties and the temperature behavior of oxygen-related donors are also investigated via the Hall effect. About 1015 cm−3 thermal donors are generated around 450–550 °C, while 1017 cm−3 new donors are formed at 750 °C. New donors presumably originate from the interface states of SiOx precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339409
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoinduced current transient spectroscopy in silicon-on-insulator films formed by oxygen implantation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3725-3727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier trapping properties in silicon on insulator material synthesized by deep oxygen implantation (SIMOX) are investigated by photoinduced current transient spectroscopy. The method consists of filling interface states and bulk traps via photoexcitation and then monitoring the transient current in the dark which corresponds to the carrier emission process. Original experimental results and theoretical treatment are used to evaluate the energy profile of minority-carrier traps. In SIMOX material annealed at high temperature, the density of states is in the range of 1012 cm−2 at the buried Si-SiO2 interface and increases near the valence-band edge. A localized level of hole traps is hardly detected at 0.3–0.4 eV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342605
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1208-1212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and Hall measurements have been carried out on thin silicon films formed by oxygen implantation (SIMOX) and high-temperature annealing. These layers have then been annealed between 450 and 850 °C for 1 h in order to study the electrical behavior of oxygen thermal donors (TD). The maximum donor concentration occurs at 550 °C for TD-I and 750 °C for TD-II. The concentration of TD-II is higher than that of TD-I and the distribution of TD-II can be nonuniform. Thermal ionization energies of these donor states are also derived. A TD level (220 meV) deeper than the typical one (150 meV) is responsible for the electrical properties of the SIMOX layers. Subsequent annealing activates shallow TD states and compensation centers. Thus the ionization energy of the deep TD level decreases greatly, when TDs are generated. High carrier mobilities have been measured which have been limited only at low temperatures by interface scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343010
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3199-3203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonhomogeneous distribution of the carrier transport properties in silicon on insulator thin films synthesized by oxygen implantation are determined using gate-controlled p-type Hall devices. The conductivity, Hall effect, and capacitance were measured between 77 and 300 K as a function of the gate voltage and then differentiated to obtain depth profiles. The hole mobility is high and nearly constant in the top 100 nm of the film but drops rapidly in the region containing implantation-induced defects. The very good quality of the top layer, similar to that of bulk Si, is confirmed by the temperature behavior of both the mobility and the ionized impurity concentration at various depths in the film. Acoustic phonon scattering is found to prevail above 120 K and Coulombian scattering below. A difference between the profile of the total number of holes and that of the mobile holes is observed at low temperatures and explained in terms of long-range potential fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337737
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characterization of the buried oxide in SOI structures by a rate window method (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3298-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for the characterization of the SOI separation by implanted oxygen (SIMOX) oxide is presented. It is based on the fact that the buried oxide can be polarized by applying a bias in the substrate of the structure. In the process of relaxation, current transients are induced in the Si film, which can be monitored by the rate window technique. The experiment reveals that the relaxation process is thermally activated with one or more time constants. These properties of the SIMOX oxide are attributed to the high metal concentration of the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354552
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Experimental investigation of silicon-on-insulator metal-oxide- semiconductor field-effect transistors at high magnetic field and low temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 408-415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de-Haas (SDH) oscillations as well as low-temperature measurements have been systematically performed in order to characterize thin-film silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The two-dimensional properties of the SOI MOS inversion layers highly depend on the quality of the front and buried Si-SiO2 interfaces. The influence of interface coupling on the quantized SDH oscillations is assessed. Even in 70 nm thin films, the carriers remain essentially confined to the lowest subband at an interface. Parasitic effects such as series resistance influence have been carefully examined in the case of short-channel devices. It is also shown that for submicronic devices, the attenuation of the oscillations as a function of the lateral electric field strongly increases with channel length. Eventually, it is demonstrated that unlike conventional bulk silicon MOSFETs, a fully depleted SOI MOSFET allows studying charge localization in MOS inversion layers, without needing any temperature variation to estimate the density of localized electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354124
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Investigation of floating body effects in silicon-on-insulator metal-oxide-semiconductor field-effect transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3912-3919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model and experimental results are proposed to account for the floating body effects in SOI (silicon-on-insulator) MOSFETs (metal-oxide-semiconductor field-effect transistors). The model enables a quantitative description of hysteresis effects in the static characteristics and shows a strong correlation between the conductance and transconductance. It is demonstrated that an SOI MOSFET may exhibit both a negative conductance and a negative transconductance. A short-channel device may be biased in such a way that a critical phenomenon, comparable to a second-order phase transition, takes place. The major parameters and applications of these critical effects are described in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349200
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Carrier generation in thin SIMOX films by deep-depletion pulsing of MOS transistors
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 84 (1994), S. 265-269 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(94)95767-3
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Towards higher sensitivity of magnetic transducers based on carrier magnetoconcentration
    Amsterdam : Elsevier
    Sensors and Actuators 4 (1983), S. 165-171 
    Details
    ISSN: 0250-6874
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0250-6874(83)85021-5
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...