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  • 1
    Electronic Resource
    Electronic Resource
    Effects of humidity on the structure and adhesion of amphiphilic monolayers on mica (1989)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 7057-7059 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100357a008
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular mechanisms associated with adhesion and contact angle hysteresis of monolayer surfaces (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 10736-10747 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100179a041
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  • 3
    Electronic Resource
    Electronic Resource
    Film thickness effects in the Ti–Si1−xGex solid phase reaction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4958-4965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of film thickness on the Ti–Si1−xGex solid phase reaction were investigated. Thin C49 TiM2 (M=Si1−yGey) films were formed from the solid phase reaction of 400 A(ring) Ti or 100 A(ring) Ti with Si1−xGex alloys. It was determined that for films formed from 400 A(ring) Ti, the nucleation barrier of the C49-to-C54 transformation decreases with increasing germanium content, for alloy compositions with up to ≈40 at. % germanium (i.e., x≤0.40). It was also observed that germanium segregates out of the TiM2 lattice, for both the C49 and C54 phases, and is replaced on the TiM2 lattice with Si from the substrate. The germanium segregation changes the Ge index y of the Ti(Si1−yGey)2. For films formed from a 100 A(ring) Ti layer it was observed that the C54 TiSi2 nucleation temperature was increased by ≥125 °C. The addition of germanium to the silicon increased the agglomeration of the C49 phase and caused the C54 TiM2 nucleation barrier to increase further. The results also indicate that the increased temperature required for the transition to the C54 phase, for the 100 A(ring) films, leads to an increased rate of germanium segregation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359786
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  • 4
    Electronic Resource
    Electronic Resource
    Stability of C54 titanium germanosilicide on a silicon-germanium alloy substrate (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5107-5114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of C54 Ti(Si1−yGey)2 films in contact with Si1−xGex substrates was investigated. The C54 Ti(Si1−yGey)2 films were formed from the Ti-Si1−xGex solid phase metallization reaction. It was determined that initially C54 Ti(Si1−yGey)2 forms with a Ge index y approximately the same as the Ge index x of the Si1−xGex substrate (i.e., y≈x). After the formation of the C54 titanium germanosilicide, Si and Ge from the Si1−xGex substrate continue to diffuse into the C54 layer, presumably via lattice and grain boundary diffusion. Some of the Si diffusing into the C54 lattice replaces Ge on the C54 lattice and the Ge index of the C54 Ti(Si1−yGey)2 decreases (i.e., y〈x). We propose that this process is driven by a reduction in C54 crystal energy which accompanies the replacement of Ge with Si on the C54 lattice. The excess Ge diffuses to the C54 grain boundaries where it combines with Si1−xGex from the substrate and precipitates as Si1−zGez which is Ge-rich relative to the substrate (z(approximately-greater-than)x). This segregation and precipitation enhances the agglomeration of the C54 titanium germanosilicide film (i.e., lower agglomeration temperature). It was observed that rapid thermal annealing techniques could be used to reduce the annealing duration and resulted in a reduction of the Ge segregation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359321
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  • 5
    Electronic Resource
    Electronic Resource
    Grain growth of rapid-thermal-annealed Y-Ba-Cu oxide superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 435-437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the microstructure of Cu-rich and stoichiometric Y-Ba-Cu oxide thin-film superconductors is presented. The films were deposited on 〈100〉 SrTiO3 by the nonvacuum technique of metalorganic deposition followed by rapid thermal annealing in oxygen. Analysis showed that for annealing temperatures below 900 °C, grain size increased with increased annealing temperature, with an enhancement in grain growth for the Cu-rich films. Annealing near or above the melting point of the 1-2-3 phase causes only a slight increase in the rate of grain growth and no detectable effects of the excess Cu. Annealing above 920 °C produces segregated CuO islands 5–10 μm in size in the Cu-rich films. Oriented grain growth was found for the 1-2-3 grains with their c axis perpendicular and parallel to the SrTiO3 substrates. Sheet resistivity measurements were correlated with grain size, phase separation, and oriented grain growth. An anomalous behavior in the resistance-temperature plot at 220–240 K of the Cu-rich films is shown to be related to the presence of the excess Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100612
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  • 6
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of high Tc superconducting thin films formed by metalorganic deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film superconductors of Y-Ba-Cu and Yb-Ba-Cu have been formed by the nonvacuum method of metalorganic deposition (MOD). The films produced in this manner were homogeneous and free of voids and cracks over large dimensions. A two-step rapid thermal annealing of the MOD films, in oxygen, at 850 °C for 60 s followed by a second annealing at 920 °C for 30 s enhanced grain growth in the films and reduced the effects of substrate interaction. Preferred epitaxial grain growth, in the high Tc films, with the c axis both perpendicular and parallel to the substrate surface, occurred on 〈100〉 SrTiO3. Both the Y-Ba-Cu and Yb-Ba-Cu films showed superconducting onset temperatures above 90 K and zero resistance at 86 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99706
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  • 7
    Electronic Resource
    Electronic Resource
    Aerosol jet etching of fine patterns (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2203-2205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful demonstration of a new etching technique, aerosol jet etching (AJE), is reported. AJE has been used to pattern fine lines with good anisotropy in silicon dioxide surfaces on silicon substrates using a hydrofluoric acid ultrafine aerosol jet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98940
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  • 8
    Electronic Resource
    Electronic Resource
    Technique of surface-wave scattering and calibration with simple liquids (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1158-1162 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Heterodyne detection of light scattered from capillary waves is used to study the surface properties of the air–liquid interface. A diffraction grating is employed to select a precise ripplon wave vector k and to provide a stable local oscillator field. The optics are designed to form a real image of the grating on the surface, thus allowing the measurements to be reproducible within 5%. The power spectrum detected in frequency domain is well fitted by a Lorentzian profile for the range of ripplon wave vectors 260≤k≤390 cm−1. The shape of the scattered spectra at each wave vector is corrected for the incident beam profile by effecting a convolution of the Lorentzian and Gaussian functional forms. The surface tensions and the kinematic viscosities of water, anisole, and ethanol are deduced from the ripplon dispersion relation corrected to the first order in damping, and found to be within 5% of the literature values. Thus we confirm the validity of approximations made for the instrumental function and the dispersion relation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138620
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanical alloying process of the zirconia–8 mol % yttria ceramic powder (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 303-305 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation process of zirconia–8 mol % yttria powder mixtures during a high energy ball milling process has been studied by means of x-ray diffraction analysis. It has been found that the m-ZrO2 (monoclinic zirconia) transforms first to m-ZrO2 solid solution and then to t-ZrO2 (tetragonal zirconia) solid solution. Finally, a single cubic zirconia solid solution phase forms after prolonged milling. The structural transformation is discussed and explained in terms of the phase relations in zirconia-yttria ceramics and the nonequilibrium nature of the mechanical alloying.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113022
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  • 10
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of (Ti0.9Zr0.1)Si2 thin films on Si(111) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2413-2415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600 °C, the films form the C49 phase and are stable in this phase up to at least 910 °C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700 °C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910 °C. The sheet resistivity of the (Ti0.9Zr0.1)Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910 °C. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112692
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