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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 536-538 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Having been exposed to hydrogen plasma, Te-doped GaAs wafers were deposited with metal Ti, to form Ti/n-GaAs Schottky barrier diodes (SBD). It was found that due to hydrogenation the Schottky barrier height (SBH) of the SBD decreases from 0.76 to 0.58 eV and the effective Richardson constant A** decreases from 11 to 0.03 A/cm2/K2. Annealing the hydrogenated SBD at different reverse biases at 100 °C produces SBHs that have a one-to-one correlation with the biases of reverse-bias annealing (RBA), i.e., the SBH can be controlled, within the range 0.58–0.74 eV, by the bias of RBA. When the reverse bias is equal to or larger than 3 V, the SBH and the effective Richardson constant of the hydrogenated SBDs after RBA are very near to those of SBDs without hydrogenation. This means that a RBA with a bias higher than a critical value, 3 V in our case, can remove the effects of hydrogenation, but if the SBD is annealed again without a bias at 100 °C for 1 h or more, its SBH and effective Richardson constant recover their hydrogenated values. The main experimental facts can be explained qualitatively by a simple theoretical model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 925-927 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Having been exposed to hydrogen plasma, the Te-doped GaAs wafers were deposited with metal Ti, to form the Ti/n-GaAs Schottky barrier diodes (SBDs). The profiles of donor concentration after successive annealing of the hydrogenated SBD at several reverse biases at 100 °C, indicated that the donor concentration in the strong electrical field region of the depletion layer increase monotonically and the donor concentration in the weak electrical field region of the depletion layer decrease monotonically with time. It is confirmed that hydrogen can be present as a negatively charged species in n-type GaAs and thus one can conclude that besides the deep donor level determined previously, hydrogen in GaAs has an acceptor level in the lower half of the energy gap or near the mid gap. There is evidence that the stronger the electrical field in strong field region of depletion layer, the faster the TeH complexes decompose in that region during a reverse bias annealing.
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 26 (1987), S. 633-634 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 309 (1984), S. 117-117 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR ? In places where the atmospheric humidity is high, condensate forms on smooth surfaces which have a temperature lower than that of the dew point. One such surface is the outside of horizontal water pipes. Gravity causes the condensate to drain and collect into globules on the undersurface of ...
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 176 (1976), S. 82-90 
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 673-675 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 314 (1994), S. 188-200 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 184 (1994), S. 473-475 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of industrial microbiology and biotechnology 25 (2000), S. 229-234 
    ISSN: 1476-5535
    Keywords: Keywords: PVA immobilization; intermittent aeration process; oxidation–reduction potential; nitrification; denitrification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The use of an immobilized-cell reactor for simultaneous carbon–nitrogen removal in wastewater with the monitoring of oxidation–reduction potential (ORP) in an intermittent aeration (IA) process was investigated. Under alternating aerated and nonaerated conditions, the ORP-time profile showed distinctive turning points that directly correlated with changes in the system chemistry and biological activity. The aeration ratio, defined as aeration time/cycle time, was optimum at 50% for obtaining the maximum efficiency of denitrification accompanied by sufficient nitrification. High simultaneous carbon–nitrogen removal efficiency could be achieved using the immobilized-cell reactor by applying the IA process. More than 90% of COD-removal efficiency and over 80% of total-nitrogen-removal efficiency were obtained using three aerobic–anoxic cycles per day at an aeration ratio of 50% and with a hydraulic retention time of 10 h. Journal of Industrial Microbiology & Biotechnology (2000) 25, 229–234.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 28 (1998), S. 1141-1145 
    ISSN: 1572-8838
    Keywords: bubble coverage ; bubble resistivity ; electrolytic cells ; horizontal electrode
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The resistivity ratio due to gas bubbles underneath horizontal anodes in electrolytic cells was measured and compared with that in an air–water model of identical geometry. It was found that at equal current density or equivalent gas generation rate, the difference in the bubble resistivity ratio between these two situations can be up to 20%. Consequently, the results obtained from an air–water model cannot be directly applied to an electrolytic cell. Results also showed that within the range of experimental conditions covered, the bubble resistivity ratios obtained for a given anode–cathode distance in both cells are linearly related to the bubble coverage ratio, based on bubbles greater than a certain size as limited by the measurement method.
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