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  • 1
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    Chapter 36 Current States, Challenges, and Opportunities of the Intelligent Tutoring Systems (ITS) in Developing Countries in Asia (2021)
    Taylor & Francis | Routledge
    Details
    Publication Date: 2024-04-07
    Description: This chapter provides an overview of ITS-related research undertaken in Asian developing countries. The chapter begins with a brief overview of the development and nature of ITSs. It then outlines the methods for selecting and analyzing the literature used for the study, describing the research foci of these studies and highlighting the findings in relation to the effectiveness of ITSs developed or deployed in these countries. The chapter concludes with a discussion of the limitations of current ITS research and identifies potential areas for further study.
    Keywords: its ; intelligent tutoring systems (its) ; asia ; research ; its ; intelligent tutoring systems (its) ; asia ; research ; Developing country ; Educational technology ; Effect size ; Mathematics ; Meta-analysis ; Philippines ; User interface ; thema EDItEUR::J Society and Social Sciences::JN Education
    Language: English
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    E-BOOK
  • 2
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    Chapter 37 Introduction to Section 6 (2022)
    Taylor & Francis | Routledge
    Details
    Publication Date: 2024-03-23
    Description: This handbook addresses a growing list of challenges faced by regions and cities in the Pacific;Rim, drawing connections around the what, why, and how questions that are fundamental;to sustainable development policies and planning practices. These include the connection;between cities and surrounding landscapes, across different boundaries and scales; the persistence;of environmental and development inequities; and the growing impacts of global;climate change, including how physical conditions and social implications are being anticipated;and addressed. Building upon localized knowledge and contextualized experiences,;this edited collection brings attention to place-;based;approaches across the Pacific Rim and;makes an important contribution to the scholarly and practical understanding of sustainable;urban development models that have mostly emerged out of the Western experiences. Nine;sections, each grounded in research, dialogue, and collaboration with practical examples and;analysis, focus on a theme or dimension that carries critical impacts on a holistic vision of city-;landscape;development, such as resilient communities, ecosystem services and biodiversity,;energy, water, health, and planning and engagement.;This international edited collection will appeal to academics and students engaged in;research involving landscape architecture, architecture, planning, public policy, law, urban;studies, geography, environmental science, and area studies. It also informs policy makers,;professionals, and advocates of actionable knowledge and adoptable ideas by connecting;those issues with the Sustainable Development Goals (SDGs);of the United Nations. The;collection of writings presented in this book speaks to multiyear collaboration of scholars;through the APRU Sustainable Cities and Landscapes (SCL);Program and its global network,;facilitated by SCL Annual Conferences and involving more than 100 contributors;from more than 30 institutions.
    Keywords: city-landscape development ; development inequities ; Pacific Rim ; sustainable development policies ; sustainable urban development ; thema EDItEUR::A The Arts::AM Architecture::AMC Architectural structure and design::AMCR Environmentally-friendly (‘green’) architecture and design ; thema EDItEUR::A The Arts::AM Architecture::AMV Landscape architecture and design::AMVD City and town planning: architectural aspects ; thema EDItEUR::R Earth Sciences, Geography, Environment, Planning::RN The environment::RNC Applied ecology
    Language: English
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of shallow p+-n junction using boron-doped Si1−xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5133-5137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained boron-doped Si1−xGex layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p+-n junction suitable for raised source/drain metal–oxide–semiconductor field effect transistor applications. Detailed electrical characterizations were performed. Our results show that the reverse leakage current could be optimized by a rapid thermal annealing at 950 °C for 20 s, and a near perfect forward ideality factor (i.e., 〈1.01) is obtained for the p+-n Si1−xGex/Si junction. By analyzing the periphery and area leakage current components of p+-n Si1−xGex/Si junctions with various perimeter lengths and areas, the degree of misfit dislocations and undercut effect were studied. The specific contact resistance was found to decrease as Ge mole fraction increases. Junction depth measurements also show that the junction depth decreases monotonically with increasing Ge mole fraction. The reduced B diffusion constant is attributed to the increasing Ge gradient in the transition region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321022
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  • 4
    Electronic Resource
    Electronic Resource
    Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1−xGex structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1831-1837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As the transistors continue to scale down, the characteristics of high-temperature-sputtered Co/Si1−xGex junction have received lots of attention because of its potential applications to heterojunction bipolar transistors. In this study, we have fabricated Co/Si1−xGex junction using room-temperature and high-temperature (i.e., at 450 °C) sputtered Co on top of strained Si0.86Ge0.14 and Si0.91Ge0.09 layers prepared by ultrahigh vacuum chemical molecular epitaxy. The relative composition of Ge in Ge-rich Si1−zGez precipitate and the solid solution of ternary phase silicide of Co–Si–Ge system were compared between room-temperature and high-temperature sputtered samples. We found that the high-temperature-sputtered samples are more effective in inhibiting lattice relaxation, which would be beneficial for manufacturing metal silicide/Si1−xGex structure devices. Mechanisms were proposed to explain the large difference between the room-temperature and high-temperature sputtered samples. It is believed that the mixed Co–Si–Ge solution on high-temperature-sputtered samples is responsible for the different silicidation behaviors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305832
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of high-field hole transport characteristics in Si1−xGex alloys with a bond orbital band structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 259-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of high-field hole transport in strained Si1−xGex alloys using a Monte Carlo technique. A bond orbital model is employed to calculate the valence-band structure in the simulation so that the transport behavior of high-energy holes can be described accurately. The model combines the k⋅p and the tight binding methods and contains no fitting parameters. The spin–orbit interaction and lattice-mismatch-induced biaxial compressive strain are included in the model. The steady-state hole drift velocity and the impact ionization rate are calculated as a function of an electric field up to 500 kV/cm. Good agreement between experiment and simulation is obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360939
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  • 6
    Electronic Resource
    Electronic Resource
    Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4749-4752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole mobility in strained Si1−xGex/Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k⋅p and the tight-binding methods with a strain Hamiltonian. The Fermi–Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si1−xGex alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357244
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  • 7
    Electronic Resource
    Electronic Resource
    GaAs bidirectional bistability switch using double triangular barrier structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2695-2698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n−-δ(p+)-n−-p+-n−-δ(p+)-n−-n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of ∼ 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357020
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  • 8
    Electronic Resource
    Electronic Resource
    Calculation of the structural dependence of infrared absorption in p-type strained layer SiGe/Si quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6646-6650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of infrared absorption due to intersubband transitions in p-type Si1−xGex/Si quantum wells has been performed. The influence of the hole envelope wave-function and the subband structure on the absorption characteristics is evaluated. In the calculation, the subbands in a SiGe strained layer are computed by using a bond orbital model, which combines the k⋅p and the tight-binding methods, with a strain Hamiltonian. Both of the Poisson and the Schrödinger equations are solved self-consistently to take into account a band-bending effect. The calculated quantum efficiency in a 40 A(ring) Si0.75Ge0.25/Si quantum well detector is compared favorably with an experimental result. The structural dependence of infrared absorption on quantum well width, doping and Ge content in a wavelength range of 3–15 μm is investigated. By varying a well width, our study reveals that a maximum absorption coefficient is obtained when the energy level of the excited-state subband is near the top of a quantum well. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359076
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1572-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550 °C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7×1012 cm−2 is obtained for poly-Si films with a doping level less than 2.2×1019 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357735
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8054-8059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2–3. A sharp capacitance–voltage profile with a full width at half-maximum of 30 A(ring) was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 μm and gate width of 50 μm were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362359
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