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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of the reactions of methoxy and ethoxy radicals with oxygen (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 66-70 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100390a013
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of ground-state atomic hydrogen in a dc plasma using third-harmonic generation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3814-3817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-harmonic generation (THG) was used to monitor ground-state atomic hydrogen H(1s 2S1/2) in a dc plasma system. A 364.6 nm laser beam focused through H2 or CH4/H2 plasmas induced THG at 121.5 nm, near the atomic hydrogen 2p 2PoJ→1s 2S1/2 Lyman-α transition. Both the intensity and frequency shift of the excitation spectra exhibited dependence on the plasma power. Absolute H atom concentration was estimated by comparing the frequency shift to that obtained in a calibrated microwave discharge flow system. The sensitivity was ∼4×1013 cm−3 (100 ppm). The measured atomic hydrogen densities were substantially less than in other diamond chemical vapor deposition methods and may explain the lower diamond deposition rates obtained with dc plasma systems of this type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346263
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  • 3
    Electronic Resource
    Electronic Resource
    Diamond synthesis in oxygen-acetylene flames: Inhomogeneities and the effects of hydrogen addition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-Raman spectroscopy, scanning electron microscopy and a surface density counting technique have been used to probe the inhomogeneities of diamond crystallites grown with an oxygen-acetylene flame on a scratched Si(100) surface. The surface temperature profile was measured using a thermal imaging camera and compared with the observed inhomogeneities in the diamond crystallites. It is concluded that the flame species flux to the surface is the dominant factor contributing to the diamond crystallite inhomogeneities. Hydrogen addition to the oxygen-acetylene flame was studied. The addition of hydrogen reduced the amount of "amorphous'' carbon contained in the diamond crystallites as measured with Raman spectroscopy. Growth density profiles were determined as a function of the inner flame front to substrate distance. For uniform growth density in the oxygen-acetylene flame the substrate must be placed in the acetylene feather at a sufficient distance from the inner flame to avoid annular growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348651
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  • 4
    Electronic Resource
    Electronic Resource
    Direct monitoring of CH3 in a filament-assisted diamond chemical vapor deposition reactor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2877-2883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of resonance-enhanced multiphoton ionization (REMPI) was used to determine relative density distributions of gas-phase methyl radical (CH3) in a filament-assisted diamond chemical vapor deposition reactor. The dependences of CH3 concentration on input CH4/H2 ratio, filament temperature, and distance from the filament were determined. We also report similar REMPI data for excited-state C(1D) atoms, which were produced photolytically from an unknown gas-phase parent. Arrhenius parameters show that the CH3 is not the parent of the C( 1D) atoms. The CH3 density saturates at high filament temperature. We compare the REMPI measurements with other determinations and models of CH3 concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351019
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  • 5
    Electronic Resource
    Electronic Resource
    Detection of atomic nitrogen by third harmonic generation (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5248-5249 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The four-wave mixing technique of third harmonic generation (THG) was used to detect gas-phase atomic nitrogen atoms. Ground state N(4S03/2) atoms were produced in a microwave discharge and monitored via 120 nm radiation which was generated by a 360 nm pulsed dye laser beam focused into the post-discharge region. The THG excitation features were blue-shifted from the 3s 4PJ→2p3 4S03/2 atomic resonance lines. Both the frequency shift and VUV intensity were sensitive to the N(4S03/2) concentration as expected for the THG process. Absolute concentration was determined using standard flow reaction calibration and yielded a minimum sensitivity of 3×1013 cm−3. Similar THG detection schemes for atomic nitrogen metastable states (2p3 2D0j and 2p3 2P0J) are discussed. The third harmonic generation technique possesses a number of potential advantages for in situ optical diagnostics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460507
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  • 6
    Electronic Resource
    Electronic Resource
    Negative electron affinity observed in boron-doped p-type diamond films by scanning field emission spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6809-6812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission properties of boron-doped diamond films were studied by combined scanning tunneling microscopy/spectroscopy and scanning field emission spectroscopy. A detailed spatial correlation between field emission sites and diamond morphology, surface work function, and diamond quality can be established by this technique. A possible indication of negative electron affinity of the (111) faces near the (111)/(111) and (111)/(100) grain boundaries and high defect sites of boron doped p-type diamond films were observed by field emission I–V (current–voltage) measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363809
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  • 7
    Electronic Resource
    Electronic Resource
    Spatially resolved atomic hydrogen concentrations and molecular hydrogen temperature profiles in the chemical-vapor deposition of diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3622-3634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here a direct measurement of the spatially resolved atomic hydrogen concentration profiles during hot-filament-assisted chemical-vapor deposition (HFCVD) of diamond films. The ground-state hydrogen (1s 2S1/2) atoms generated in this process are monitored by an optical four-wave-mixing technique, third-harmonic generation (THG). For THG, a 364.6 nm dye laser beam is focused into the HFCVD reactor and the third-harmonic radiation near resonant with the Lyman-α (2p 2P0j↔1s 2S1/2) transition in atomic hydrogen at 121.6 nm is observed. The resultant THG intensity and THG peak shift with respect to the Lyman-α transition are both dependent on hydrogen atom concentration. Titration experiments based on the reaction NOCl+H→HCl+NO were conducted to obtain absolute hydrogen atom concentrations from the relative concentrations determined in the THG experiment. Spatially resolved molecular hydrogen temperature and concentration profiles obtained by coherent anti-Stokes Raman scattering in a similar HFCVD reactor are reported. The observed H atom concentrations exceed computed equilibrium concentrations based on the measured gas temperatures. Transport of the atomic hydrogen from the hot filament surfaces is discussed and diffusion is shown to be the principal mechanism controlling the H atom distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359939
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  • 8
    Electronic Resource
    Electronic Resource
    Multiple internal reflection infrared spectroscopy of hydrogen adsorbed on diamond(110) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4049-4053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple internal reflection infrared spectroscopy is used to investigate the reaction of atomic hydrogen with a polished, natural type IIa diamond (110) dehydrogenated surface held at 673 K. A single infrared absorption band at 2880 cm−1 is observed and is attributed to the C-H stretching mode on an sp3 hybridized surface carbon. The band is stable up to surface temperatures between 1073 and 1173 K, and is absent when the dehydrogenated surface is exposed to atomic deuterium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359487
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen atom detection in the filament-assisted diamond deposition environment (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1031-1033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonance-enchanced multiphoton ionization (REMPI) technique was employed for detection of gas phase atomic hydrogen in the filament-asisted diamond growth environment. The H atom REMPI signal varied significantly with the reactant CH4/H2 fraction as well as with the filament temperature. We interpret these observations as evidence for the surface role of atomic hydrogen in the diamond growth mechanism. The spatial resolution of the REMPI technique allowed us to confirm that hydrogen atom transport in the deposition region occurs by diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100789
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared detection of gaseous species during the filament-assisted growth of diamond (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared diode laser absorption spectroscopy is employed as an in situ method to examine gas phase species present during filament-assisted deposition of diamond films. From a reactant mixture of 0.5% methane in hydrogen, methyl radical (CH3 ), acetylene (C2H2), and ethylene (C2H4 ) are detected above the growing surface, while ethane (C2H6 ), various C3 hydrocarbons, and methylene (CH2) radicals are below our sensitivity levels. The growth of polycrystalline diamond films on Si wafers and polycrystalline Ni is confirmed with x-ray and Raman scattering, scanning electron microscopy, and Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99575
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