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  • 1
    Publication Date: 2024-01-12
    Description: Hybridization between divergent lineages often results in reduced hybrid viability. Here we report findings from a series of independent molecular analyses over several seasons on four life stages of F1 hybrids between the newts Triturus cristatus and T. marmoratus. These two species form a bimodal hybrid zone of broad overlap in France, with F1 hybrids making up about 4% of the adult population. We demonstrate strong asymmetry in the direction of the cross, with one class (cristatus-mothered) making up about 90% of F1 hybrids. By analyzing embryos and hatchlings, we show that this asymmetry is not due to prezygotic effects, as both classes of hybrid embryos are present at similar frequencies, implicating differential selection on the two hybrid classes after hatching. Adult F1 hybrids show a weak Haldane effect overall, with a 72% excess of females. The rarer marmoratusmothered class, however, consists entirely of males. The absence of females from this class of adult F1 hybrids is best explained by an incompatibility between the cristatus X chromosome and marmoratus cytoplasm. It is thus important to distinguish the two classes of reciprocal-cross hybrids before making general statements about whether Haldane\xe2\x80\x99s rule is observed.
    Keywords: Allozyme ; Bateson\xe2\x80\x93Dobzhansky\xe2\x80\x93Muller incompatibility ; cytonuclear incompatibility ; hybridization ; microsatellite ; mtDNA ; postzygotic isolation asymmetry ; Triturus
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 823-835 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Closed-form solutions for the transient conductivity and the electric field in optically controlled semiconductors have been obtained. The one-dimensional calculations include important effects such as field-independent electrode injection efficiency, displacement current, space charge, carrier trapping, and the influence of trapped charge on the field. The model is restricted to linear phenomena so that, for example, the carrier-velocity dependence upon electric field is neglected. Despite such limitations, the model provides much insight into the operation of the semiconductor switch and is particularly applicable under conditions of low carrier generation rate and velocity saturation. A significant result of the model reveals that even for small departures of the electrode injection efficiency from unity, nonuniform and very intense electric fields will develop, particularly near the electrodes. These large fields may be exaggerated, however, since the onset of a field-dependent injection efficiency will tend to limit such fields. A preliminary comparison of the theory and experiment for the current pulse was conducted for the case of a GaAs target, under conditions of low carrier generation rate. The comparison shows that the linear model is capable of explaining the observed current waveform under such conditions.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique for the structural characterization of thin amorphous films employing synchrotron radiation parallel beam x-ray optics at grazing angles of incidence is detailed. At incident angles near to the critical angle for total external reflection, sampling of specimens may be achieved via the evanescent mode. The parallel beam geometry allows the use of a technique in which a 2θ detector, incorporating a parallel plate collimator, scans diffraction data for a given incident angle. For a specified wavelength, the incident angle chosen will determine the penetration of the radiation into the sample (∼10–1000 A(ring)). The data must be corrected for significant peak shifting resulting from x-ray refraction, as well as for the effects associated with conventional θ:2θ scans. Preliminary data resulting from the first application of this technique to amorphous hydrogenated silicon:carbon thin films, deposited onto crystalline silicon substrates, will be presented and discussed. Conventional θ:2θ powder diffraction data will also be presented as a comparative standard.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5225-5230 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-biased performance of a molecular-beam-epitaxy-grown high-power optothyristor has been systematically characterized for pulsed power-switching applications. The device has a P+N-SI-PN+ thyristor-like structure with the bipolar junctions formed by AlGaAs. The semi-insulating (SI) GaAs used is liquid-encapsulated-Czochralski grown, undoped, and 650 μm in thickness. It is found that the reverse-biased optothyristor can be triggered by a light-emitting diode operated at 10−5 W, and miniature semiconductor lasers can trigger the switch with 132 A current using only a 1-mm-diam optical aperture. The reverse switching di/dt and the maximum peak current are reported as a function of blocking voltage. The effects of bipolar junctions on both sides of the SI-GaAs are also reported by comparing the bulk photoconductive current with the optothyristor switched current. It is shown that a laser beam of 0.05 μJ can be used to trigger on and switch about the same current as a 0.3 μJ laser beam, suggesting the possibility of integrating miniature semiconductor lasers and the optothyristors on the same chip to form a portable, compact, high-power solid-state pulser.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 950-952 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective area removal of oxides from the surface of exposed GaAs (100) has been achieved by irradiating the sample with a broad, low energy electron beam in a H2 ambient. It is proposed that electrons dissociate the molecular hydrogen to create ionized species which react with the surface. The surfaces of samples decontaminated at 365 °C, up to electron energies of 200 eV, were undamaged as revealed by atomic force microscopy. Moreover, quantum well structures epitaxially grown on these surfaces exhibited luminescence. A possible reaction mechanism responsible for the oxide removal is described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1708-1710 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first study of a new system where the confinement potential of a high mobility quasi-one-dimensional electron gas on the (100) GaAs surface is varied using two, two-dimensional hole gases produced on the adjacent (311)A surfaces. The structure consists of two lateral two-dimensional p-n junctions, placed back-to-back to form a p-n-p structure. The confinement potential of the narrow n-type channel can thus be modulated by applying a bias to the adjacent p-type regions. Magnetoresistance measurements of the narrow channel show magnetic depopulation of the one-dimensional subbands [K.-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986)], following the model of Berggren et al. [Phys. Rev. B 37, 10118 (1988)] widths and one-dimensional carrier concentrations are extracted to fully characterize the dependence of the channel on the applied "hole-gate'' voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure on a (311)A GaAs substrate selectively etched to expose (100) facets. The electron gas formed on the (100) facets is confined in one lateral dimension by the p–n junctions formed with the adjacent two-dimensional hole gases on (311)A, thereby forming a p–n–p structure. Far-infrared cyclotron resonance spectra demonstrate the dimensionality of such structures and yield typical lateral confinement energies of 22.3 cm−1 and electronic widths of ∼900 nm. These estimates are supported by cathodoluminescence data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4288-4300 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The results of a neutron diffraction study on the structure of amorphous hydrogenated carbon a-C:H are presented up to a maximum temperature of 1000 °C. The data show clearly the effect on atomic correlations of elevated temperatures, with the initial room-temperature amorphous network (a mixture of single bonds and olefinic double bonds) becoming progressively aromatic, then graphitic as hydrogen is evolved. Complementary x-ray diffraction and infrared spectroscopy data are also presented, the infrared data enabling a more detailed discussion of the temperature-dependent hydrogen environment, and the x-ray data are used to highlight the change in the carbon network. Comparisons have been made with previous work on similar systems and a brief summary of these results is given.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 581 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 5360-5364 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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