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  • 1
    Electronic Resource
    Electronic Resource
    Density variation of tungsten films sputtered over topography (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4295-4300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Density and resistivity of sputtered tungsten films are directly measured as a function of angle-of-vapor incidence. The film density is found to drop off quickly at deposition angles greater than 50°, and the resistivity rises sharply at angles greater than 70°. These deposition angle effects in films deposited over topography can be predicted using simulation by ballistic deposition (SIMBAD), a two-dimensional computer simulation of thin-film growth using ballistic deposition of hard disks. Simulated film structure and density is in good agreement with real tungsten films deposited over vias. To confirm density predictions, etch rate measurements made on planar films are presented which confirm the dependence of etch rate on film density. The results of the measurement are used to develop an etching algorithm using SIMBAD density predictions. Films deposited over vias are etched to reveal the presence of low-density regions of film covering the via sidewalls, showing excellent agreement with the simulation results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349107
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  • 2
    Electronic Resource
    Electronic Resource
    A Monte Carlo computer simulation of electromigration (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2821-2825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, a Monte Carlo computer program is used to simulate the motion of atoms during electromigration. In the program, current density is accurately determined in two dimensions and the result of the impressed current is a drift of activated atoms along the grain boundaries in response to an "electron wind'' force. The grain structure simultaneously undergoes annealing—atoms are moved so as to minimize the curvature of the grain boundaries. Heat is lost to the back of the substrate and a single temperature of the metal line is used to characterize both thermal conduction and Joule heating. Qualitatively correct predicted results include the dependence of mean lifetime upon current density, temperature and grain size, the distribution of failure times (log normal), and the occurrence of 1/f noise in measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354076
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental study and computer simulation of collimated sputtering of titanium thin films over topographical features (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1339-1344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study and computer simulation of collimated sputtering of titanium (Ti) thin films onto submicrometer trenches is presented. The effect of square grid collimators with aspect ratios varying from 0.5 to 2 has been studied. Simulation of collimated sputtering involves the combination of the simulation of sputter distributions vapor transport model and the simulation by ballistic deposition film growth model. This combination is able to simulate the effect of collimation on the spatial and angular distributions of deposited atoms, and is able to predict the film coverage, deposition rate change, and microstructure of the deposited films. Both experimental and simulation results show that bottom coverage in trenches of aspect ratio 1.2 can be significantly improved from 50% to more than 80% using collimation. However, a penalty is paid by a corresponding decrease in deposition rate down to 15% of the uncollimated value. Additionally, the microstructure (grain size and orientation) is altered by collimation. The good agreement between the simulation and experimental results indicates that the model will be very useful for predicting and optimizing the properties of films deposited by collimated sputtering over topographical features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354889
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  • 4
    Electronic Resource
    Electronic Resource
    Simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and vias (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3572-3579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model for the shape evolution of a thin metal film due to the bulk diffusion of vacancies. High-temperature Al sputter deposition and postdeposition annealing are currently becoming significant (very large scale integrated circuit metallization processes. The attractiveness of these processes lies in the ability to fill and planarize high-aspect-ratio vias and contacts with very few process steps. Previous attempts to model these processes have not fully emphasized the role played by bulk diffusion and three-dimensional curvature. We present the differential equation and boundary conditions that describe the flow of vacancies in metal films. An approximate method of solution for this equation system is presented and incorporated into the thin-film deposition simulator SIMBAD (simulation of ballistic deposition). This simulator is then used to present results pertaining to both postdeposition annealing and high-temperature sputter deposition. Particular emphasis is placed upon determining the effects of via and contact geometries, wetting angles and deposition rate during sputtering. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360708
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  • 5
    Electronic Resource
    Electronic Resource
    Explanation of spurious features in tungsten deposition using an atomic momentum model (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4157-4163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adequate uniformity of thin film coverage is necessary in very large scale integration. Recently, cross-sectional scanning electron microscope micrographs of thin films deposited by sputter systems producing highly directional flux have exhibited unusual growth features. A model based on the momenta of the incident sputter flux and resultant asymmetric diffusion has been developed to explain the effects and has been incorporated into simulation of ballistic deposition, a Monte Carlo simulation package. Experimental growth of tungsten films deposited over VLSI topography is presented illustrating the unique features of the deposited films which necessitated the use of the momentum model. The model reflects a general effect for thin film growth in sputtering systems that is more apparent for directional deposition, for example, tungsten deposition at low pressure or when using a collimated system. Experimental results of tungsten films deposited over high aspect ratio contact cuts are carefully compared to simulations incorporating the atomic momentum model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359875
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  • 6
    Electronic Resource
    Electronic Resource
    Compositional variations in Ti-W films sputtered over topographical features (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8114-8120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study compositional variations in Ti-W films sputtered from Ti-W alloy targets and deposited over topographical features, the sticking coefficients and angular distributions of sputtered flux arriving at the substrate for titanium (Ti) and tungsten (W) atoms have been investigated by an overhang structure, pinhole experiment, and simulation package. The simulation involves the combination of a vapor transport model which is able to model the angular distributions for the respective materials, and a film growth model which is able to predict the compositional variation of the deposited Ti-W films over topographical features. Experimentally, it was found that the sticking coefficients of Ti and W are both very close to unity for the conditions considered. However, the angular distributions of these two materials are quite different due to their different transport properties through the sputter gas. For the Ti-W films, the compositional variations calculated using the simulated angular distributions agreed well with the ones measured experimentally. This result clearly demonstrates that the differences between the angular distributions of Ti and W atoms cause the compositional variations in the films. In the case of Ti-W films deposited over vias or trenches, the films on the sidewalls are Ti enriched, but on the bottom are Ti deficient. The good agreement between the simulation and experimental results indicates that the model will be very useful for predicting and optimizing the properties of films deposited by alloy targets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356531
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties and microstructure of reactively sputtered indium nitride thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4144-4149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of reactively sputtered InN thin films were measured in the spectral region 2.5–5.5 eV using spectroscopic ellipsometry. The measured pseudodielectric function data of the InN films were found to vary with deposition power. The effective medium approximation theory, which describes a random aggregate microstructure, was able to relate the differences in the measured optical properties to the surface microroughness and porosity of the InN films. The relationship between microstructure and deposition power was subsequently verified by scanning electron microscopy. The analysis and electron microscopy indicate that the film deposited at 90 W was most representative of InN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341326
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  • 8
    Electronic Resource
    Electronic Resource
    Variation of composition of sputtered TiN films as a function of target nitridation, thermal anneal, and substrate topography (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 220-222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition of reactively sputtered TiN was measured with RBS and AES for aspect ratio 2 topography as a function of Ti target nitridation. The bottom of the aspect ratio 2 topography was nitrogen depleted (Ti:N=1.78:1) as compared to the field (Ti:N=1.01:1) for films sputtered with a non-nitrided target at 20 kW and 400 °C. No such depletion effect was observed for TiN films sputtered with a nitrided target. Thermal annealing of the depleted TiN films at 450 °C in N2 restored the composition to near-stoichiometric. SIMBAD simulation with a saturation-dependent nitrogen sticking coefficient was used to understand the nature of the nitrogen depletion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114673
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  • 9
    Electronic Resource
    Electronic Resource
    Chiral nematic order in liquid crystals imposed by an engineered inorganic nanostructure (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 399 (1999), S. 764-766 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Control over the orientational order of liquid crystals (LCs) is critical to optical switching and display applications. Porous polymer networks have been used to influence the orientation of embedded chiral liquid crystals, yielding for example reflective displays. Here we show that ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/21612
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  • 10
    Electronic Resource
    Electronic Resource
    Chiral sculptured thin films (1996)
    [s.l.] : Nature Publishing Group
    Nature 384 (1996), S. 616-616 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR — We have observed optical activity in thin solid films composed of nanometre-scale helical columns. These films rotate the plane of polarization of light in a manner analogous to cholesteric liquid crystals and other structurally chiral media. This rotation demonstrate the optical ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/384616a0
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