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  • 1
    Electronic Resource
    Electronic Resource
    Low-band-gap Ga0.5In0.5P grown on (511)B GaAs substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5110-5113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355756
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  • 2
    Electronic Resource
    Electronic Resource
    Photomodulated absorption spectroscopy on AlGaAs-GaAs heterostructures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4233-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical transitions in quantum-well heterostructures are very well revealed by photomodulated absorption spectroscopy. With respect to nonmodulated absorption spectroscopy, a strong increase in both room-temperature resolution and signal-to-noise ratio is observed. This new technique is most attractive for the investigation of multilayers grown on transparent substrates. The evolution of the spectral lineshapes of bulk and excitonic transitions as a function of temperature is shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341290
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  • 3
    Electronic Resource
    Electronic Resource
    Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1739-1747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single quantum wells composed of GaAs/InGaAs/GaAs were grown by molecular beam epitaxy and characterized at room temperature by photoreflectance and at 6 and 77 K by photoluminescence spectroscopy. For the InGaAs/GaAs heterojunction, utilizing a band offset ratio of 85:15 (conduction band:valence band) for the intrinsic (nonstrained) interface and a contribution of the hydrostatic compression to the valence band movement corresponding to the pressure sensitivity of the spin orbit band, excellent agreement is found between calculated excitonic transition energies and those found by experiment at all temperatures studied. Our analysis indicates that material parameters and the combined strain components used to calculate band structure are not temperature dependent to our degree of sensitivity. An empirical equation, which differs slightly from that for bulk InGaAs crystals, describing the nonstrained band-gap energy as a function of In fraction at 77 K is presented. The difference between band offset ratios for the intrinsic and strained heterojunction are found to be significant and the relative merits of each are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344395
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  • 4
    Electronic Resource
    Electronic Resource
    Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of GaAs/AlGaAs compound multilayers and interfaces at atomic scale resolution. Using a scanning tunneling microscope, the atomic registry in the epitaxial layers and their interfaces was observed. The semiconductor band gaps and valence-band offsets relative to the Fermi level are obtained via local spectroscopy in the GaAs and AlGaAs multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103563
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  • 5
    Electronic Resource
    Electronic Resource
    High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1939-1941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided in situ by lateral current blocking pn junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311)A side facets to the preferential growth (100) active area facets. Uncoated devices (750 μm×4 μm) have been found to have threshold currents as low as 6 mA (Jth=320 A/cm2) and exhibit single-mode behavior to greater than 100 mW at a wavelength of ∼1.0 μm when reflectivity modified (90%/10%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103028
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  • 6
    Electronic Resource
    Electronic Resource
    Nanometer resolution in luminescence microscopy of III-V heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103154
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  • 7
    Electronic Resource
    Electronic Resource
    Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2611-2613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium composition variations in strained InGaAs/GaAs quantum wells grown on nonplanar substrates by molecular beam epitaxy have been analyzed by spatially and spectrally resolved low-temperature cathodoluminescence. For our growth conditions, the In adatom migration length on (100) facets has been determined to be ∼25 μm. A maximum relative increase of In incorporation of (approximately-equal-to)6% on (100) ridges is observed and is found to be strain independent (In composition) for quantum wells nominally 35 and 70 A(ring) thick with In composition of 0.10–0.22. Significantly asymmetric indium adatom migration is observed between adjacent (100) facets for ridges and grooves formed with (111)A and (311)A multifaceted sidewalls, indicating that multifaceting kinetically inhibits adatom migration. For structures designed for one-step growth of index-guided injection lasers with built-in nonabsorbing waveguides, we show that differences greater than 80 meV in the effective band gap of a 70 A(ring) quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101952
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  • 8
    Electronic Resource
    Electronic Resource
    Optical characterization of stress in narrow GaAs stripes on patterned Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 365-367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and spatially resolved cathodoluminescence (CL) techniques are used to characterize the stress in narrow GaAs stripes grown on Si platforms. Since no overgrowth occurs over the recess edges, the GaAs stripes are grown unconstrained along one dimension. A duplication of the optical transitions is found in the PL spectrum from a region containing embedded GaAs and stripes. The peaks in the high-energy shoulders of the PL spectrum are identified by CL measurements with high spatial resolution as the luminescence contribution of the GaAs stripes. They are submitted to lower internal stress values. A study on the geometrical dependence of the strain regime shows that a nonuniform biaxial strain field with a dominant longitudinal component is present in the stripes. The uniform biaxial strain, found in GaAs on Si (001), is present at stripe intersections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101894
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A gallium arsenide film is grown embedded in masked pre-etched wells in silicon vicinal (001) substrates by molecular beam epitaxy. The morphology and crystallinity of the embedded GaAs on Si layers are identical to those of large area GaAs on Si grown on the same wafer, as indicated by the comparison of Nomarski contrast photomicrographs and electron channeling patterns. High-resolution electron microscope images reveal the epitaxial relation of the GaAs/Si interface on the bottom and the sidewall of the wells. On the slope most of the dislocations are restricted to a narrow region near the interface. The same photoluminescent behavior is found for the GaAs deposit in the different silicon environments. This embedded growth technique is suitable for realization of a coplanar GaAs on Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100069
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  • 10
    Electronic Resource
    Electronic Resource
    Miniband dispersion in GaAs/AlxGa1−xAs superlattices with wide wells and very thin barriers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2666-2668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1−x As superlattices with wide wells (275–255 A(ring)) and withb arriers as thin as 17 A(ring). Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 A(ring) barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 A(ring) barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 A(ring) barriers, create difficulty in resolving the miniband structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100189
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