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  • 1
    Electronic Resource
    Electronic Resource
    Exact fields in multi-electrode ion optics (1994)
    New York, NY : Wiley-Blackwell
    Rapid Communications in Mass Spectrometry 8 (1994), S. 939-941 
    Details
    ISSN: 0951-4198
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The exact determination of electrostatic potential is vital in specifying the resolution in ion-beam focusing devices such as quadrupole mass spectrometers (QMS). Current numerical routines are marked by poor convergence on boundaries and become unwieldy when the number of electrodes, 2n, is greater than four, or when the structure is modified. Using a conformal transformation we have succeeded in finding the exact electrostatic potential distribution everywhere within a QMS which contains four cylindrical electrodes. All the coefficients in the multipole expansion of the potential are readily calculated. The boundary value problem is solved by matching coefficients on the electrode surface, which is a circle embedded in the transformed coordinate frame. We have proven that for every allowed position of the electrode centre, R, there exists a corresponding electrode radius, r, for which the dodecapole term in the potential expansion vanishes. Our analytically obtained relationship between the above-mentioned parameters differs slightly from that in current use. As these parameters are based on an exact solution, their practical use in mass determination may be considerable.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/rcm.1290081206
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  • 2
    Electronic Resource
    Electronic Resource
    Physical and Chemical Composition Studies of the Lipoproteins of Fasting and Heparinized Human Sera (1955)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 59 (1955), S. 930-938 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150531a028
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  • 3
    Electronic Resource
    Electronic Resource
    Intense surface photoemission: Space charge effects and self-acceleration (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4802-4810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet laser irradiation of surfaces, in the course of photoemission or surface photochemical studies, often produce copious electron emission, up to 1000's of A/cm2. The time-dependent fields produced by these electrons accelerate some of the electrons up to 5.4 times their initial energies. The steady-state fields return most of the emitted electrons to the surface. We discuss and illustrate both phenomena with theoretical simulations and experiment, and discuss possible implications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346137
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  • 4
    Electronic Resource
    Electronic Resource
    Highly charged ion based time-of-flight emission microscope (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2077-2081 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An emission microscope using highly charged ions as the excitation source has been designed, constructed, and operated. A novel "acorn" objective lens has been used to simultaneously image electron and secondary ion emission. A resistive anode-position sensitive detector is used to determine the x–y position and time of arrival of the secondary events at the microscope image plane. Contrast in the image can be based on the intensity of the electron emission and/or the presence of particular secondary ions. Spatial resolution of better than 1 μm and mass resolution m/Δm of better than 400 were demonstrated. Background rejection from uncorrelated events of greater than an order of magnitude is also achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150582
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of the indirect energy gap in crystalline silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6943-6946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of crystalline silicon samples are measured for temperatures below 1000 K. The optical transitions are analyzed in terms of excitonic and band-to-band transitions. From the modeling of the line shape we are able to determine the fundamental indirect band gap for temperatures up to 750 K. The temperature dependence follows the Varshni equation with Eg(0)=1.1692 eV, α=(4.9±0.2)×10−4 eV/K and β=(655±40) K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362447
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  • 6
    Electronic Resource
    Electronic Resource
    Optical data storage in semi-insulating GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1820-1822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a light-induced on–off switching of the selective donor–acceptor pair excitation in bulk-grown semi-insulating GaAs. The spectral dependence of the switching process is related to the metastability of the EL2 defect. In the ground state, this As-antisite related midgap donor compensates the shallow acceptors and is responsible for the semi-insulating properties of the material. The loss of the shallow acceptor compensation, that accompanies the transfer of the EL2 to its metastable state leads to the observed absorption and luminescence quench of the shallow donor–acceptor pairs. We exploit these effects in demonstrating optical data storage in semi-insulating GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121194
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  • 7
    Electronic Resource
    Electronic Resource
    Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2973-2975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength (∼2 eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g., Xe44+ and Au53+) to produce the electronic excitation. The observation of excitonic features in the luminescence is particularly unusual for silicon nanostructures. The temperature dependence and the measurement of the triplet–singlet splitting of the emission strongly support the excitonic assignment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413958
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  • 8
    Electronic Resource
    Electronic Resource
    Self-assembled epitaxial and polycrystalline magnetic nickel nanocrystallites (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2817-2819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline nickel particles were embedded in amorphous alumina and crystalline TiN matrices using a pulsed-laser deposition process to investigate the effect of texturing on magnetic properties of nickel nanocrystallites. The crystalline quality of both the matrix and magnetic particles were investigated by cross-sectional high-resolution transmission electron microscopy. The embedded Ni nanocrystals were found to be epitaxial in case of TiN matrix and polycrystalline in Al2O3 amorphous matrix. The Ni nanocrystals on TiN/Si grow epitaxially because the TiN acting as a template grows epitaxially on Si substrate via domain epitaxy. On the other hand, Ni nanocrystals in Al2O3 matrix are polycrystalline because of the amorphous nature of the alumina matrix. Magnetization versus temperature measurements have shown that the blocking temperature, above which the samples lose magnetization-field (M–H) hysteretic behavior, of Ni–TiN sample (∼190 K) is significantly higher than that of Ni–Al2O3 sample (∼30 K) with a similar size distribution of embedded magnetic particles. A comparison of the values of coercivity (Hc) of the two samples, measured from M–H data, indicates that epitaxial Ni nanocrystals also exhibit significantly higher coercivity than polycrystalline Ni particles. The high values of TB and Hc of Ni–TiN samples with respect to TB of Ni–Al2O3 samples are believed to be associated with preferred alignment of nanocrystallites. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412428
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  • 9
    Electronic Resource
    Electronic Resource
    Persistence of (2,4-dichlorophenoxy)acetic acid and 2(2,4-dichlorophenoxy)propionic acid in agricultural and forest soils of Northern and Southern Ontario (1984)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 32 (1984), S. 578-581 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf00123a039
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  • 10
    Electronic Resource
    Electronic Resource
    FATTY ACID COMPOSITION OF THE SERUM LIPOPROTEINS (1961)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 94 (1961), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1961.tb35532.x
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