ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
Language
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Topics (search only within journals and journal articles that belong to one or more of the selected topics)
Show more topics
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5395-5400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline and amorphous Si-C films were prepared by rf glow-discharge decomposition of silane-methane mixtures at 700 °C. We have demonstrated that polycrystalline SiC films with large grains grow under heavy hydrogen dilution. The bonding properties as a function of film composition and hydrogen dilution were characterized by means of x-ray diffraction and x-ray photoelectron spectroscopy. Crystallization takes place at around C content x=0.5 in Si1−xCx, accompanying some segregation of carbon atoms in grain boundaries, as a result of a preference for heteronuclear bonds. It was shown that C-C(C3−nSin) (n=0–3) bonds appear in the carbidic phase of C-rich films, leading to occurrence of compressive strain in the crystalline SiC grains. In addition, effects of hydrogen dilution were discussed in correlation with the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350561
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Relationship between the stress and bonding properties of amorphous SiNx:H films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5676-5681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C on single-crystal Si and fused quartz substrates using SiH4-NH3 mixtures. The stress and vibrational absorption were investigated as a function of the N content x. Increased tensile stress subsequent to a reduction in the compressive stress with increasing x was observed. From the values of stress determined for films on two different substrates, values of Y/(1−ν) for a-SiNx:H films were estimated, where Y is Young's modulus and ν the Poisson ratio. The values of Y/(1−ν) rapidly decreased with an increase in x, from 4.2×1012 dyn/cm2 for a-Si:H films to about 2.5×1011 dyn/cm2 for a-SiNx:H films having x above 1.0. It was found that the measured tensile stress in a-SiNx:H films for high x above 1.0 was caused by the intrinsic stress, and that incorporated NH bonds act to relax the intrinsic stress. These results were discussed in terms of the change in the bonding configuration as a function of x, based on a modified random bonding model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351917
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1462-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were prepared on a fused quartz substrate as a function of the rf power (0–30 W) and deposition temperature (620–770 °C) by a plasma-enhanced chemical vapor deposition method. The preferential orientation to a random, 〈100〉 or 〈110〉 crystal axis can be selected by changing some of these preparation conditions. Electron spin resonance (ESR) and the dependence of the dark conductivity σd on the measurement temperature T have been investigated to examine how the structure of the grain boundary depends on the preferential orientation (P.O.) and affects the electrical properties. An enhancement in the degree of P.O. is found to lead to a reduction in the local ESR spin density within the boundary region and g factor. Also, for the films with a random or weak P.O., σd as a function of 1/T exhibits a kink around room temperature, and the conduction in a low-T range is interpreted in terms of the model of variable range hopping within the boundary region. These results and the characteristics of thin-film transistors fabricated on the poly-Si films are discussed in terms of the structural change of the boundary region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351239
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1374-1377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped polycrystalline SiC films were deposited from a SiH4-CH4-H2-(PH3 or N2) mixture by plasma-enhanced chemical vapor deposition at 700 °C. The best crystallinity was obtained at x∼0.53 in Si1−xCx for both undoped and doped films. The crystallinity was enhanced by both P and N doping, but deteriorated again under high doping conditions. Also, better crystallinity was obtained by doping with P rather than N. Intrinsic tensile and compressive stresses were observed for P- and N-doped films, respectively. The resistivity and dangling-bond density decreased in correspondence to the enhancement in crystallinity. Origins of the dangling bonds and of a change in the crystallinity were discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351748
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Crystal structure of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7945-7947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction and electron-spin-resonance measurements, the crystal structure and bonding configurations of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C are shown to change abruptly at around x=0.5. At around this composition, a polycrystalline film with a cubic SiC 〈111〉 preferred orientation and an average grain size of 95 nm is grown on a fused silica substrate under high hydrogen dilution. The structural change can be attributed to an increase in the probability of occurrence of a Si- C4 tetrahedron in a chemically ordered network.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347490
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structure of defects in silicon oxynitride films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2598-2605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon oxynitride (a-SiNxOy) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, which was carried out with variation in the nitrogen-flow-rate ratio (RN) and the oxygen-flow-rate ratio (RO) to control the nitrogen and oxygen contents, x and y, respectively. Changes in the structural properties and the characteristics of defects in the films were examined based on the electron spin resonance as well as infrared and optical absorption measurements. An increase in either RN or RO was found to decrease the deposition rate, the density of charged or neutral defects, and the randomness of the bonding network. Thus the incorporation of O or N atoms into Si nitride or Si oxide films, respectively, acts to improve the qualities of the insulating films. Furthermore, the nearest N and O atom neighboring to a Si site would be randomly bonded to the Si atom. Our results also showed that N-related dangling bonds, other than so-called K centers, are favorably created after annealing, but that the formation of Si–O bonds in the films makes the formation of such defects difficult. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343895
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3715-3722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped SiO2:F films were deposited by changing the CH4 flow rate, [CH4], using a plasma-enhanced chemical vapor deposition technique from SiH4/O2/CF4/CH4 mixtures. The thermal stability for the films deposited with a fixed temperature of 300 °C was investigated through the changes in the dielectric constant (εS), IR spectra and stress with annealing temperature, TA, from 400 to 800 °C. The breakdown strength for films as-deposited were also measured. The addition of carbon to SiO2:F films resulted in the films with low εS (up to 3.0) and high water resistivity. Addition of high [CH4] in the films resulted in stable εS for TA=500 °C or less. The CH4 addition initially decreased the breakdown strength but then increases again. Under the application of sum rule to the analysis of the vibrational absorption, it was suggested that the decrease in εS with [CH4] results from the decrease in the effective dynamic charge of Si–O dipoles along with the direct contribution of Si–F bonds incorporated to SiO2. The decrease in Si–F and Si–O peak frequencies based on the analysis of the charge transfer model suggested an increase in the Si–F and Si–O bond length, in addition to a decrease in the Si–O–Si bond angle. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372406
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structural change of polycrystalline silicon films with different deposition temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3844-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a 〈111〉, 〈110〉, and 〈100〉 texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369755
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 357-366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were deposited as a function of the rf power (0–30 W) and deposition temperature Td (600–750 °C) using disilane by a plasma-enhanced chemical vapor deposition (PECVD) method. For comparison, poly-Si films were also deposited using monosilane. The preferential orientation to a random, (100), or (110) texture was able to be selected by changing some of these deposition conditions. It was suggested that the change in the texture is caused by a change in the surface-diffusion coefficient of SiHn adsorbates and by effects of an ion bombardment, rather than by a change in the deposition rate. For PECVD poly-Si films, both the x-ray relative intensity and the crystallinity rapidly decreased with decreasing the film thickness thinner than 0.4 μm. The value of g in the electron spin resonance spectra and that of stress strongly depended on the rf power and the thickness. Further, when a film was annealed in H2 plasma, the value of g shifted from 2.0054 to 2.0043. These results are examined in terms of formation of different types of grain boundary which can be associated with a lattice deformation around the dangling bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359330
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2896-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363142
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...