ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x=0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3×1018–5×1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1418032
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