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  • 11
    Electronic Resource
    Electronic Resource
    Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8838-8840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN. The transition rate is determined by integrating Fermi's golden rule for a two-body, screened Coulomb interaction over the possible final states using a numerically generated dielectric function and pseudowavefunctions. The full details of all relevant conduction and valence bands in zinc-blende and wurtzite GaN are included from an empirical pseudopotential calculation. It is found that the transition rate is consistent with a relatively "soft'' threshold energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362509
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  • 12
    Electronic Resource
    Electronic Resource
    Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7763-7769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the effects of external stress on the current–voltage characteristics of double-barrier (001)- and (111)-oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and, in pseudomorphic structures, lattice mismatch cause shifts in the conduction and valence bands of the well and barrier layers with respect to the unstrained alignment. For certain stress orientations piezoelectric effects give rise to internal electric fields parallel to the current direction. The combined piezoelectric and band-structure effects modulate the transmission resonances which control the shape of the current versus voltage characteristics of the structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362381
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  • 13
    Electronic Resource
    Electronic Resource
    Electron–electron interaction in three-dimensional model quantum box (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1798-1803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron–electron interaction on the electronic structure of a three-dimensional model quantum box are studied. The potential in the lateral plane of the quantum box is taken to be a two-dimensional harmonic potential, and an infinite quantum-well potential is used to represent the confinement in the vertical direction. Three-dimensional two-electron wave functions are constructed by the configuration interaction technique. Exchange and correlation are found to affect the electronic structure strongly. The effect of the finite thickness of the quantum box on the electronic structure is examined. It is shown that the electron–electron interaction can induce interesting polarization effects not only in the lateral plane but also in the vertical direction of the quantum box. Numerical results based on GaAs material parameters are presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360211
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  • 14
    Electronic Resource
    Electronic Resource
    Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1033-1038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ensemble Monte Carlo technique including the details of the first four conduction bands within the full Brillouin zone is used to calculate the basic electronic transport properties for both zincblende and wurtzite crystal phases of bulk gallium nitride. The band structure throughout the Brillouin zone is determined using the empirical pseudopotential method. Calculations of the electron steady-state drift velocity, average energy, valley occupancy and band occupancy in the range of electric fields up to 500 kV/cm are presented. It is found that the threshold electric field for intervalley transfer is greater and that the second conduction band is more readily occupied in wurtzite than in zincblende GaN over the range of electric fields examined here. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360405
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  • 15
    Electronic Resource
    Electronic Resource
    Barrier height change in GaAs Schottky diodes induced by piezoelectric effect (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1191-1193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel manifestation of piezoelectric effects in GaAs has been observed. The change of barrier height, φB, of Schottky diodes induced by uniaxial stresses, S, along 〈100〉, 〈011〉, 〈01¯1〉, and 〈111〉 has been measured. Shifts in φB due to the appearance of piezoelectric polarization charges at the semiconductor-metal interface for directions other than 〈100〉 are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105499
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  • 16
    Electronic Resource
    Electronic Resource
    Electron transport characteristics of GaN for high temperature device modeling (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4777-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN. Analytic expressions for spherical, nonparabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone are matched to experimental effective mass data and to a pseudopotential band structure. The low-field electron drift mobility is calculated for temperatures in the range of 300–600 K and for ionized impurity concentrations between 1016 and 1018 cm−3. Compensation effects on the mobility are also examined. Electron drift velocities for fields up to 500 kV/cm are calculated for the above temperature range. To aid GaN device modeling, the drift mobility dependences on ambient temperature, donor concentration, and compensation ratio are expressed in analytic form with parameters determined from the Monte Carlo results. Analytic forms are also given for the peak drift velocity and for the field at which the velocity peak is reached as functions of temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367269
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  • 17
    Electronic Resource
    Electronic Resource
    Monte Carlo calculation of electron transport properties of bulk AlN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1446-1449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Monte Carlo method is used to simulate electron transport in bulk, wurtzite phase AlN using a three valley analytical band structure. Spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone are fitted to a first-principles band structure. The electron drift mobility is calculated as a function of temperature and ionized donor concentration in the ranges of 300–600 K and 1016–1018 cm−3, respectively. The effect of compensation on ionized impurity scattering and the associated change in the mobility are considered. The simulated electron steady-state drift velocity and valley occupancy for electric fields up to 600 kV/cm are presented for 300, 450, and 600 K. Our calculations predict that AlN will exhibit a much smaller negative differential mobility effect than GaN, and that the drift velocity versus electric field curve will show a very broad peak. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366848
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  • 18
    Electronic Resource
    Electronic Resource
    Electronic subbands for AlxGa1−xAs/GaAs multilayer and superlattice structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 294-298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out calculations of the conduction bandstructure for GaAs/AlxGa1−xAs (0〈x≤1) multilayer structures with very thin layers. We report results for the case of a small number of layers for which the quasi-continuous bandstructure of a large superlattice is a poor approximation. Using a multivalley effective mass approach which includes nonparabolicity, we find that for large aluminum concentrations and thin layers the lowest bound state is derived from the X valley and is localized mainly in the alloy layers. The structures investigated have a range of design parameters which is useful for superlattice modulation-doped field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338819
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  • 19
    Electronic Resource
    Electronic Resource
    Current versus voltage measurements on GaAs doping superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2401-2403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of current versus voltage measurements on GaAs doping superlattices with current flow parallel to the superlattice symmetry axis, i.e., perpendicular to the layers. The material was grown by low-pressure metalorganic chemical vapor deposition and characterized by excitation intensity-dependent photoluminescence spectroscopy. The luminescence results show the superlattices to be of high quality. Four samples with nominally identical doping densities and layer thicknesses but different total numbers of superlattice periods were investigated. The electrical measurements demonstrate the strong dependence of the current on the number of superlattice periods. Our results agree semi-quantitatively with a simple model which attributes the current to thermionic emission over the multiple built-in space-charge potential barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339473
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  • 20
    Electronic Resource
    Electronic Resource
    Gate current of modulation-doped field-effect transistors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1541-1546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new room-temperature model for modulation-doped field-effect transistors and heterojunction insulated gate field-effect transistors that accounts for effects induced by the gate current at large gate voltages. For large gate currents the quasi-Fermi levels in the GaAs channel and the AlGaAs barrier layers are different because of the limited electron exchange imposed by the heterojunction band offset. As a consequence, the channel electron concentration for large gate voltages exceeds the value expected for the n-AlGaAs/GaAs material system in thermal equilibrium. The channel electron capacitance can have two peaks as a function of gate voltage leading to similar structure in the gate voltage dependence of the transconductance. We find good agreement between our calculated and measured gate currents as a function of the gate voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341830
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