Publication Date:
2019-07-13
Description:
The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.
Type:
IEEE Sensors 2005; Oct 31, 2005 - Nov 04, 2005; Irvine, CA; United States
Format:
text
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