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  • Other Sources  (3)
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  • 1
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    InGaAs/InAlAs hot-electron transistor (1986)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Using InGaAs for the base and InAlAs for the emitter and collector barriers, the first hot-electron transistor in this material system is fabricated. It is shown that 1.6 percent of the injected hot electrons can be transported ballistically through a 0.3 micron thick In(0.53)Ga(0.47)As plus 800-A-thick InAlAs barrier layer at 77 K giving rise to an average mean free path of 920 A. An energy spread of 130 MeV was observed for the ballistic electrons injected at about 700 MeV above the thermal equilibrium conditions. The value of collector barrier heights measured are in reasonable agreement with those deduced independently from thermionic emission studies in InGaAs gate, InAlAs/InGaAs capacitor structures.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 48; 1799-180
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Optical investigation of highly strained InGaAs-GaAs multiple quantum wells (1987)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: Low-temperature optical transmission spectra of several In(x)Ga(1-x)/GaAs strained MQWs with x = 0.13-0.19 and well widths of 85-213 A have been measured. The excitonic transitions up to 3C-3H were observed along with steplike structures corresponding to band-to-band transitions, identified as 1C-1L transitions. By fitting experimental results to the calculations, it is concluded that the light holes are in the GaAs barrier region (type II MQW), and the valence-band offset is determined to be 0.30. Attention is given to a possible system in which the transition from type I to type II for light holes might be observed.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 62; 3366-337
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates (1987)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 50; 1748-175
    Format: text
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    NASA TECHNICAL REPORTS
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