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  • 1
    facet.materialart.
    Unknown
    Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate (2003)
    In:  Other Sources
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    Publication Date: 2018-06-08
    Description: Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.
    Keywords: Physics (General)
    Type: Applied Physics Letters; Volume 84; no. 2; 263-265
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Enhanced adhesion from high energy ion irradiation (1983)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: It has been found that the adhesion of thin metal films on insulators, semiconductors, and metals could be improved by subjecting the material to a high-energy ion bombardment. Griffith et al. (1982) have first suggested a use of this technique with insulators. The present investigation has the objective to determine the mechanism for the adhesion enhancement. A description is presented of a preliminary transmission electron microscopy (TEM) study of thinned bonded samples of silver on silicon using electron diffraction. It is found that irradiation of a variety of thin film-substrate combinations by heavy ion beams will provide a remarkable improvement in the adherence of the film. The evidence for the mechanism involved in the enhancement of adhesion is discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: (ISSN 0040-6090)
    Format: text
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    NASA TECHNICAL REPORTS
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