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  • Other Sources  (6)
  • 1
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    Heteroepitaxial growth of Cd(1-x)Mn(x)Te on GaAs by metalorganic chemical vapor deposition (1987)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: In this letter, preliminary results are reported of heteroepitaxial growth of the dilute magnetic semiconductor alloy Cd(1-x)Mn(x)Te on GaAs by metalorganic chemical vapor deposition. Dimethylcadmium (DMCd), diethyltellurium (DETe), and tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) were used as source materials. The TCPMn had to be heated to as high as 140 C to provide the required vapor pressure. Films with Mn atomic fractions up to 30 percent have been grown over the temperature range 410-450 C. Results of optical absorption/transmission, photoluminescence, and X-ray diffraction measurements are presented along with a scanning electron micrograph showing good surface morphology of the grown layers.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 51; 2251-225
    Format: text
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  • 2
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    High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy (1988)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.
    Keywords: LASERS AND MASERS
    Type: Applied Physics Letters (ISSN 0003-6951); 53; 1248-125
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  • 3
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    Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition (1988)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.
    Keywords: SOLID-STATE PHYSICS
    Type: NAS 1.71:NPO-17399-1-CU
    Format: application/pdf
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  • 4
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    Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition (1990)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.
    Keywords: Solid-State Physics
    Format: application/pdf
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  • 5
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    Chemical-Vapor Deposition Of Cd1-xMnxTe (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Experimental process makes films with interesting magnetic and magneto-optical properties. Films of dilute magnetic semiconductor alloy Cd1-xMnxTe deposited on glass and GaAs substrates by metalorganic chemical-vapor deposition (MOCVD). Devices made with Cd1-xMnxTe films known to exhibit strong photoluminescence, stimulated emission, and magnetically-tunable lasing action. In addition, energy-band gaps of such material tailored by altering its composition - property giving flexibility in development of high-efficiency cascade solar photovoltaic cells. Performs at atmospheric pressure, resulting in more-uniform films, covering larger area, and enabling higher production rate.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-17399 , NASA Tech Briefs (ISSN 0145-319X); 13; 7; P. 76
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  • 6
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    Composite Semiconductor Substrates (1989)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-17342 , NASA Tech Briefs (ISSN 0145-319X); 13; 5; P. 22
    Format: text
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