ISSN:
1057-9257
Schlagwort(e):
Thermal oxidation
;
Kinetics
;
Electrical properties
;
Trichloroethane (TCA)
;
Hydrogen chloride (HCl)
;
Hydrogen/oxygen (H2/O2)
;
VLSI
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
The oxidation of single-crystal silicon wafers has been investigated using an industrial thermal oxidation system. The growth characteristics and electrical properties of the oxides resulting from pure hydrogen/oxygen (H2/O2), trichloroethane/oxygen (TCA/O2) and hydrogen chlorid/oxygen (HCl/O2) mixtures have been investigated and compared. The addition of both HCl and TCA to oxygen produces higher growth rates and improved electrical characteristics. It is shown that the oxidation rate for TCA/O2 is approximately 30%-40% higher than for HCl/O2 and that comparable electrical properties can be readily obtained. A TCA/O2 ratio of 1 mol% gives the optimum process for VLSI applications, though 3 mol% HCl/O2 gives comparable results. It is suggested that the overall mechanisms governing the processes are similar. However, the TCA process is a safer and cleaner alternative because it generates HCl in situ in the oxidation chamber.
Zusätzliches Material:
10 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/amo.860020403
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