Publication Date:
2017-10-17
Description:
Author(s): Chao An, Pengchao Lu, Xuliang Chen, Yonghui Zhou, Juefei Wu, Ying Zhou, Changyong Park, Chuanchuan Gu, Bowen Zhang, Yifang Yuan, Jian Sun, and Zhaorong Yang We present in situ high-pressure synchrotron x-ray diffraction (XRD) and electrical transport measurements on quasi-one-dimensional single-crystal Ti S 3 up to 29.9–39.0 GPa in diamond-anvil cells, coupled with first-principles calculations. Counterintuitively, the conductive behavior of semiconductor... [Phys. Rev. B 96, 134110] Published Mon Oct 16, 2017
Keywords:
Structure, structural phase transitions, mechanical properties, defects
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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