Publication Date:
2019-06-27
Description:
Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.
Keywords:
PHYSICS, SOLID-STATE
Type:
Physical Review Letters; 28; Mar. 13
Format:
text
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