ISSN:
1432-0630
Keywords:
PACS: 71.55.
;
i; 72.80.Cw
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. The effect of bias on the nonexponentiality of transient capacitance waveforms due to V1, V2 and V3 centers in vanadium-doped n-Si is analyzed using Spectral Analysis of DLTS (SADLTS). The emission rate spectrum broadens with the maximum value λmax of emission rate with increasing the reverse bias. A less sensitive field dependence of the emission rate spectrum of V1 compared to V2 and V3 centers suggests differences in the nature of these centers. The results of simulation based on the Poole-Frenkel model for the field enhanced emission rate combined with the field-distribution model inside a Schottky diode serve to check the reliability of analysis by code CONTIN and reproduce almost quantitatively the field effect on the emission rate spectrum of V2 centers when an effective dielectric constant ɛs=23.4 is used. From the bias dependence of the peak height in the emission rate spectrum, the profile of the V3 center concentration is deduced.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538771
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