Publication Date:
2017-07-08
Description:
Author(s): Katsuya Ichiki, Kojiro Mimura, Hiroaki Anzai, Takayuki Uozumi, Hitoshi Sato, Yuki Utsumi, Shigenori Ueda, Akihiro Mitsuda, Hirofumi Wada, Yukihiro Taguchi, Kenya Shimada, Hirofumi Namatame, and Masaki Taniguchi We investigated the bulk-derived electronic structure of the temperature-induced valence transition system EuNi 2 ( Si 1 − x Ge x ) 2 ( x = 0.70 , 0.79, and 0.82) by means of hard x-ray photoemission spectroscopy (HAXPES). The HAXPES spectra clearly show distinct temperature dependencies in the spectral intensiti... [Phys. Rev. B 96, 045106] Published Fri Jul 07, 2017
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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