ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Unsaturated polyester diol-polyurethane composite networks (1996)
    Weinheim : Wiley-Blackwell
    Angewandte Makromolekulare Chemie 240 (1996), S. 163-170 
    Details
    ISSN: 0003-3146
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: This article introduced the formation of an unsaturated polyester/diol-polyurethane hybrid polymer networks(UP/PU HPNs). The phase behavior was examined by the dynamic mechanical properties and the morphology was investigated by transmission microscope(TEM) and atomic force microscopy(AFM). The effect of phase separation on mechanical properties is briefly described as well.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/apmc.1996.052400114
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    XPS Study of Mn Thin Films Grown on GaAs(001) Surfaces (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 653-656 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The composition-depth profile studies using x-ray photoelectron spectroscopy (XPS) are carried out for Mn thin films grown on GaAs(001) substrates at different substrate temperatures. The experimental results show that due to the interdiffusion and chemical reaction, an Mn-Ga-As mixed layer is formed between the Mn thin film and GaAs substrate. The thickness of the Mn-Ga-As mixed layer for the sample grown at 300 K is much thinner than that grown at 400 K. Because of the strong interdiffusion and chemical reaction, the overlayer on the GaAs substrate for the sample grown at 450 K is dominated by an Mn-Ga-As mixed layer, and no pure Mn area can be found on the top of the surface. The formation mechanism of γ-Mn grown on GaAs(001) surfaces is discussed.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...